scholarly journals Ultrafast Photonics: Broadband Nonlinear Photoresponse of 2D TiS2 for Ultrashort Pulse Generation and All-Optical Thresholding Devices (Advanced Optical Materials 4/2018)

2018 ◽  
Vol 6 (4) ◽  
pp. 1870014 ◽  
Author(s):  
Yanqi Ge ◽  
Zhengfeng Zhu ◽  
Yanhua Xu ◽  
Yunxiang Chen ◽  
Si Chen ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Optical Materials ◽  
Pulse Generation ◽  
All Optical ◽  
Ultrafast Photonics ◽  
Ultrashort Pulse Generation

Broadband Nonlinear Photoresponse of 2D TiS2for Ultrashort Pulse Generation and All-Optical Thresholding Devices

2017 ◽  
Vol 6 (4) ◽  
pp. 1701166 ◽  
Author(s):  
Yanqi Ge ◽  
Zhengfeng Zhu ◽  
Yanhua Xu ◽  
Yunxiang Chen ◽  
Si Chen ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Pulse Generation ◽  
All Optical ◽  
Ultrashort Pulse Generation

Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation

2001 ◽  
Vol 692 ◽  
Author(s):  
Silke Schön ◽  
Lukas Gallmann ◽  
Markus Haiml ◽  
Ursula Keller
Keyword(s):  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Optical Switching ◽  
Modulation Depth ◽  
Pulse Generation ◽  
Absorber Material ◽  
Semiconductor Saturable Absorber ◽  
All Optical ◽  
Ultrashort Pulse Generation ◽  
All Optical Switching

AbstractA novel ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirror (SESAM) covering nearly the entire Ti:sapphire gain spectrum is demonstrated. This device supports sub-10-fs pulse operation of a laser. In contrast to previous SESAMs of comparable bandwidth, our device can be monolithically grown by molecular beam epitaxy and requires no post-growth processing. GaAs is used as semiconductor saturable absorber material. The high defect concentration of the material is due to the lattice-mismatched growth on a fluoride surface with (111) orientation. With a time response of 1.2 ps for carrier trapping, a saturation fluence of 36 μJ/cm2 and a modulation depth of up to 2.2% , the GaAs saturable absorber is well-suited for all-optical switching in SESAM devices used for ultrashort pulse generation.

Ultrashort pulse generation using supercontinuum generated by Er-doped fiber laser with carbon nanotube

CLEO: 2014 ◽  
2014 ◽  
Author(s):  
A. Okamura ◽  
Y. Sakakibara ◽  
E. Omoda ◽  
H. Kataura ◽  
N. Nishizawa
Keyword(s):  
Carbon Nanotube ◽  
Fiber Laser ◽  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Er Doped ◽  
Ultrashort Pulse Generation

scholarly journals Yb-doped mixed sesquioxides for ultrashort pulse generation in the thin disk laser setup

2013 ◽  
Vol 113 (1) ◽  
pp. 13-18 ◽  
Author(s):  
Kolja Beil ◽  
Clara J. Saraceno ◽  
Cinia Schriber ◽  
Florian Emaury ◽  
Oliver H. Heckl ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Thin Disk ◽  
Pulse Generation ◽  
Disk Laser ◽  
Thin Disk Laser ◽  
Ultrashort Pulse Generation ◽  
Laser Setup

Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation

2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ultrashort Pulse ◽  
Continuous Wave ◽  
Pulse Generation ◽  
Power Scaling ◽  
Optically Pumped ◽  
Ultrashort Pulse Generation

scholarly journals Non-equilibrium ultrashort pulse generation strategies in VECSELs

Optica ◽  
2017 ◽  
Vol 4 (4) ◽  
pp. 412 ◽  
Author(s):  
I. Kilen ◽  
S. W. Koch ◽  
J. Hader ◽  
J. V. Moloney
Keyword(s):  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation ◽  
Non Equilibrium
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