Optimization of carrier transport layer: A simple but effective approach toward achieving high efficiency all-solution processed InP quantum dot light emitting diodes

2021 ◽  
pp. 106256
Author(s):  
Xiwen Zhu ◽  
Yaoyao Liu ◽  
Hanhao Liu ◽  
Xiaohai Li ◽  
Haozhi Ni ◽  
...  
2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


ACS Nano ◽  
2016 ◽  
Vol 11 (1) ◽  
pp. 684-692 ◽  
Author(s):  
Ikjun Cho ◽  
Heeyoung Jung ◽  
Byeong Guk Jeong ◽  
Jun Hyuk Chang ◽  
Younghoon Kim ◽  
...  

2016 ◽  
Vol 36 ◽  
pp. 97-102 ◽  
Author(s):  
Zhenyang Liu ◽  
Ke Zhao ◽  
Aiwei Tang ◽  
Yihao Xie ◽  
Lei Qian ◽  
...  

2018 ◽  
Vol 6 (20) ◽  
pp. 1800652 ◽  
Author(s):  
Fan Cao ◽  
Dewei Zhao ◽  
Piaoyang Shen ◽  
Jialong Wu ◽  
Haoran Wang ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Moonbon Kim ◽  
Nayeon Lee ◽  
JoongHwan Yang ◽  
Chang Wook Han ◽  
Hyun-Min Kim ◽  
...  

We report high-efficiency quantum dot light-emitting diodes (QLEDs) with Li-doped TiO2 nanoparticles (NPs) as an alternative electron transport layer (ETL). Colloidally stable TiO2 NPs are applied as ETLs of the...


2017 ◽  
Vol 5 (3) ◽  
pp. 522-526 ◽  
Author(s):  
Yan Fu ◽  
Daekyoung Kim ◽  
Hyoungseok Moon ◽  
Heesun Yang ◽  
Heeyeop Chae

Fabrication of a multilayered quantum dot-light-emitting diode (QLED) with an inverted architecture cannot be usually fully solution-processed mainly due to the significant destruction of the pre-existing quantum dot (QD) emitting layer (EML) occurring during the subsequent solution-deposition of the hole transport layer (HTL).


2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Wei-Chih Chao ◽  
Tzu-Hsuan Chiang ◽  
Yi-Chun Liu ◽  
Zhi-Xuan Huang ◽  
Chia-Chun Liao ◽  
...  

AbstractThe industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases electron mobility and enhances hole transport. This, together with optimizing the electron transport layer, leads to green 545 nm InP QLEDs with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency 57.5 cd/A. EQE approaches the theoretical limit of InP quantum dots, with an emission quantum yield of 86%.


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