Room-Temperature Carbon Nanotube Single-Electron Transistors with Mechanical Buckling-Defined Quantum Dots

2018 ◽  
Vol 4 (5) ◽  
pp. 1700628 ◽  
Author(s):  
Jian Zhang ◽  
Siyu Liu ◽  
Lingyuan Kong ◽  
Jean Pierre Nshimiyimana ◽  
Xiao Hu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Mechanical Buckling ◽  
Electron Transistors

ChemInform Abstract: Carbon Nanotube Single-Electron Transistors at Room Temperature.

ChemInform ◽  
2010 ◽  
Vol 32 (43) ◽  
pp. no-no ◽  
Author(s):  
Henk W. Ch. Postma ◽  
Tijs Teepen ◽  
Zhen Yao ◽  
Milena Grifoni ◽  
Cees Dekker
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 871-876 ◽  
Author(s):  
Jasper P. Fried ◽  
Xinya Bian ◽  
Jacob L. Swett ◽  
Ivan I. Kravchenko ◽  
G. Andrew D. Briggs ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Large Amplitude ◽  
Room Temperature ◽  
Charge Trapping ◽  
Current Level ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Temperature Liquid ◽  
Electron Transistors ◽  
Charge Noise

We analyze the noise in room-temperature liquid-gated quantum dots. We demonstrate large amplitude charge noise and two-level fluctuations in the current level which we attribute to charge trapping at the disordered graphene edges.

Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process

2008 ◽  
Vol 47 (4) ◽  
pp. 2036-2039 ◽  
Author(s):  
Shin Iwasaki ◽  
Masatoshi Maeda ◽  
Takafumi Kamimura ◽  
Kenzo Maehashi ◽  
Yasuhide Ohno ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Plasma Process ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
Sign in / Sign up

Export Citation Format

Share Document