Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2

Advanced Electronic Materials ◽

10.1002/aelm.202000906 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2000906

Author(s):

Sungjae Hong ◽

Kang Lib Kim ◽

Yongjae Cho ◽

Hyunmin Cho ◽

Ji Hoon Park ◽

...

Keyword(s):

Transistor Circuits ◽

Ferroelectric Memory

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Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe 2

Advanced Electronic Materials ◽

10.1002/aelm.202000479 ◽

2020 ◽

Vol 6 (9) ◽

pp. 2000479

Author(s):

Sungjae Hong ◽

Kang Lib Kim ◽

Yongjae Cho ◽

Hyunmin Cho ◽

Ji Hoon Park ◽

...

Keyword(s):

Transistor Circuits ◽

Ferroelectric Memory

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Magnetostrictive delay-line stores operating at 1 Mc/s using transistor circuits

Proceedings of the IEE - Part B Electronic and Communication Engineering ◽

10.1049/pi-b-2.1959.0231 ◽

1959 ◽

Vol 106 (18S) ◽

pp. 1267-1276

Author(s):

H.A. Showell ◽

C.W.M. Barrow ◽

R.E. Collis

Keyword(s):

Transistor Circuits

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Device Engineering Strategy of Zr-Doped HfOx Ferroelectric Memory for Unconventional Computing Applications

2021 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas51556.2021.9401627 ◽

2021 ◽

Author(s):

Jiyong Woo

Keyword(s):

Unconventional Computing ◽

Engineering Strategy ◽

Ferroelectric Memory ◽

Device Engineering

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High speed, nondestructive readout from thin‐film ferroelectric memory

Applied Physics Letters ◽

10.1063/1.106679 ◽

1992 ◽

Vol 60 (26) ◽

pp. 3319-3321 ◽

Author(s):

Sarita Thakoor

Keyword(s):

Thin Film ◽

Ferroelectric Memory

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SrBi2Ta2O9 has only two polar axes – a problem for high density ferroelectric memory devices

Solid State Communications ◽

10.1016/s0038-1098(01)00242-3 ◽

2001 ◽

Vol 119 (3) ◽

pp. 117-119 ◽

Author(s):

K Franke ◽

G Martin ◽

M Weihnacht ◽

A.V Sotnikov

Keyword(s):

High Density ◽

Memory Devices ◽

Ferroelectric Memory

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Atomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2)

2020 IEEE Symposium on VLSI Technology ◽

10.1109/vlsitechnology18217.2020.9265091 ◽

2020 ◽

Author(s):

S. Lombardo ◽

C. Nelson ◽

K. Chae ◽

S. Reyes-Lillo ◽

M. Tian ◽

...

Keyword(s):

Polarization Switching ◽

Atomic Scale ◽

Memory Material ◽

Ferroelectric Memory

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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters ◽

10.1186/s11671-020-03384-z ◽

2020 ◽

Vol 15 (1) ◽

Author(s):

Siqing Zhang ◽

Yan Liu ◽

Jiuren Zhou ◽

Meng Ma ◽

Anyuan Gao ◽

...

Keyword(s):

Low Voltage ◽

Gate Structure ◽

Ferroelectric Memory

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Transistor circuits in television: some evolutionary aspects

Radio and Electronic Engineer ◽

10.1049/ree.1973.0016 ◽

1973 ◽

Vol 43 (1-2) ◽

pp. 103 ◽

Author(s):

A. Martinez

Keyword(s):

Transistor Circuits ◽

Evolutionary Aspects

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Analysis of transistor circuits having multiple DC solutions with the thermal constraint

COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ◽

10.1108/03321641111133244 ◽

2011 ◽

Vol 30 (4) ◽

pp. 1350-1362

Author(s):

Michał Tadeusiewicz ◽

Stanisław Hałgas

Keyword(s):

Transistor Circuits

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Geometrical analysis of two-transistor circuits with more than three operating points

Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005. ◽

10.1109/ecctd.2005.1523057 ◽

2006 ◽

Author(s):

M. Claus

Keyword(s):

Geometrical Analysis ◽

Transistor Circuits ◽

Operating Points

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