Lead-Free Thermoelectrics: High Figure of Merit in p-type AgSnmSbTem+2

2011 ◽  
Vol 2 (1) ◽  
pp. 157-161 ◽  
Author(s):  
Mi-Kyung Han ◽  
John Androulakis ◽  
Sung-Jin Kim ◽  
Mercouri G. Kanatzidis
Keyword(s):  
2014 ◽  
Vol 50 (68) ◽  
pp. 9697-9699 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Zhenzhen Hui ◽  
Jie Yang ◽  
...  

Transparent conducting p-type Bi2Sr2Co2Oy thin films show c-axis self-orientation with high figure of merit by a solution method.


2016 ◽  
Vol 4 (1) ◽  
pp. 126-134 ◽  
Author(s):  
Leo Farrell ◽  
Emma Norton ◽  
Christopher M. Smith ◽  
David Caffrey ◽  
Igor V. Shvets ◽  
...  

The delafossite structured CuCrO2 system is well known as p-type transparent conducting oxide. We have synthesized a Cu deficient form at low process temperature maintaining its good conductive properties.


2020 ◽  
Vol 29 (12) ◽  
pp. 126501
Author(s):  
Weiqiang Wang ◽  
Zhenhong Dai ◽  
Qi Zhong ◽  
Yinchang Zhao ◽  
Sheng Meng

2000 ◽  
Vol 626 ◽  
Author(s):  
Melissa A. Lane ◽  
John R. Ireland ◽  
Paul W. Brazis ◽  
Theodora Kyratsi ◽  
Duck-Young Chung ◽  
...  

ABSTRACTWe have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.


2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Chenguang Fu ◽  
Shengqiang Bai ◽  
Yintu Liu ◽  
Yunshan Tang ◽  
Lidong Chen ◽  
...  

2018 ◽  
Vol 10 ◽  
pp. 130-138 ◽  
Author(s):  
Xiaolei Shi ◽  
Zhi-Gang Chen ◽  
Weidi Liu ◽  
Lei Yang ◽  
Min Hong ◽  
...  
Keyword(s):  

2019 ◽  
Vol 10 ◽  
pp. 634-643 ◽  
Author(s):  
Srashti Gupta ◽  
Dinesh Chandra Agarwal ◽  
Bathula Sivaiah ◽  
Sankarakumar Amrithpandian ◽  
Kandasami Asokan ◽  
...  

The present study aims to see the enhancement in thermoelectric properties of bismuth telluride (Bi2Te3) annealed at different temperatures (573 and 773 K) through silver (Ag) nano-inclusions (0, 2, 5, 10, 15 and 20 wt %). Transmission electron microscopy (TEM) images of Ag incorporated in Bi2Te3 annealed at 573 K shows tubular, pentagonal, trigonal, circular and hexagonal nanoparticles with sizes of 6–25 nm (for 5 wt % Ag ) and 7–30 nm (for 20 wt % Ag). Ag incorporated in Bi2Te3 annealed at 773 K shows mainly hexagonally shaped structures with particle sizes of 2–20 nm and 40–80 nm (for 5 wt % Ag) and 10–60 nm (for 20 wt % Ag). Interestingly, the samples annealed at 573 K show the highest Seebeck coefficient (S, also called thermopower) at room temperature (p-type behavior) for 5% Ag which is increased ca. five-fold in comparison to Ag-free Bi2Te3, whereas for samples with the same content (5% Ag) annealed at 773 K the increment in thermopower is only about three-fold with a 6.9-fold enhancement of the power factor (S 2σ). The effect of size and shape of the nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit.


2017 ◽  
Vol 5 (47) ◽  
pp. 12610-12618 ◽  
Author(s):  
Elisabetta Arca ◽  
Aoife B. Kehoe ◽  
Tim D. Veal ◽  
Aleksey Shmeliov ◽  
David O. Scanlon ◽  
...  

In Cr2O3, Ni is a more effective dopand than Mg due to its higher solubility and its capability to contribute to the VB, improving holes dispersion.


RSC Advances ◽  
2015 ◽  
Vol 5 (33) ◽  
pp. 26383-26387 ◽  
Author(s):  
Guangsheng Fu ◽  
Guoying Yan ◽  
Liqing Sun ◽  
Hongrui Zhang ◽  
Haizhong Guo ◽  
...  

c-axis oriented Ca3Co4O9 p-type transparent conducting thin films with high figure of merit.


Author(s):  
Christopher A. Howells ◽  
Cynthia Watkins ◽  
Rama Venkatasubramanian

We have investigated the power generation characteristics of thermoelectric devices made from high Figure of Merit p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2.7Se0.3 superlattice materials. The Figure of Merit, ZT (where Z is a measure of the material’s thermoelectric properties and T is the absolute temperature) of the p-type and n-type superlattices were each measured at 300K and found to be 2.4 and 1.2 respectively [1]. Sixteen p-n couples were developed using these superlattice materials and they were configured into a 4×4 thermoelectric module. The electrical measurements (Current, Voltage, and Power) of the 4×4 superlattice thermoelectric modules under various resistive loads and temperature differentials in a standard pressure environment are presented and from these, we have determined the peak power and internal resistance of the module. We also discuss other opportunities to further investigate this device as well as its suitability for power applications.


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