Melioration of Electrical and Optical Properties of Al and B Co-Doped ZnO Transparent Semiconductor Thin Films

Undoped, Al-doped and Al-B co-doped ZnO transparent semiconductor thin films were deposited on glass substrates by sol-gel method and spin coating technique. This study investigated the influence of Al (2 at.%) doping and Al (2 at.%)-B (1 or 2 at.%) co-doping on the microstructural, surface morphological, electrical and optical properties of the ZnO-based thin films. XRD analysis indicated that all as-prepared ZnO-based thin films were polycrystalline with a single-phase hexagonal wurtzite structure. The substitution of extrinsic dopants (Al or Al-B) into ZnO thin films can significantly degrade the crystallinity, refine the microstructures, improve surface flatness, enhance the optical transparency in the visible spectrum and lead to a shift in the absorption edge toward the short-wavelength direction. Experimental results showed that the Al-doped and Al-B co-doped ZnO thin films exhibited high average transmittance (>91.3%) and low average reflectance (<10%) in the visible region compared with the ZnO thin film. The optical parameters, including the optical bandgap, Urbach energy, extinction coefficient and refractive index, changed with the extrinsic doping level. Measured results of electrical properties revealed that the singly doped and co-doped samples exhibited higher electron concentrations and lower resistivities than those of the undoped sample and suggested that 2 at.% Al and 1 at.% B were the optimum dopant concentrations for achieving the best electrical properties in this study.

Sustainable hydrogen production from water using tandem dye-sensitized photoelectrochemical cells

If generated from water using renewable energy, hydrogen could serve as a carbon-zero, environmentally benign fuel to meet the needs of modern society. Photoelectrochemical cells integrate the absorption and conversion of solar energy and chemical catalysis for the generation of high value products. Tandem photoelectrochemical devices have demonstrated impressive solar-to-hydrogen conversion efficiencies but have not become economically relevant due to high production cost. Dye-sensitized solar cells, those based on a monolayer of molecular dye adsorbed to a high surface area, optically transparent semiconductor electrode, offer a possible route to realizing tandem photochemical systems for H2 production by water photolysis with lower overall material and processing costs. This review addresses the design and materials important to the development of tandem dye-sensitized photoelectrochemical cells for solar H2 production and highlights current published reports detailing systems capable of spontaneous H2 formation from water using only dye-sensitized interfaces for light capture.

The Discovery of a Superhard P-type Transparent Semiconductor: Al2.69B50

Superhard semiconductors have been long sought after for electronic device applications enduring extreme conditions, such as astronautics, due to their intrinsic toughness, high thermal and chemical stability. Here, we report...

Ab-initio Calculations of Structural Parameters, Band Structure and Density of States of Delafossite CuAlO

Delafossite CuAlO2 is a p-type transparent semiconductor oxide with space group R-3m (N°166) is a material with extended applications in different fields. Structural parameters, band structure, and density of CuAlO2 have been investigated in the light of the Density Functional Theory (DFT) using PBE pseudopotentials (norm-conserving pseudopotentials). Our calculations are performed with the ABINIT package using cut-off energy of 100 Hartree, showing convergence to cut-off energy up to 30 Hartree. The lattice parameters of CuAlO2 obtained after the relaxation process are a = b = 2.904 Å and c = 17.202 Å; and consequently, volume of V=174.014 Å3 , also the derivate of the bulk modules Bo´=4.1, and bulk modulus Bo=174 Gpa were found. We find that discrepancies between our calculated lattice parameters a, c, and c/a are overestimated about 0.798%, 0.591%, and 0.219% compared to the reference’s theoretical calculations of Qi-Jun Liu et,al respectively. The calculated energy band structure of CuAlO2 and the high-symmetry points of Brillouin Zone show that the delafossite structure has an indirect band gag (~ 1.21 eV) because the top valence and the bottom conduction are found at F point and Г point, respectively. This work aims to study structural parameters, band structure, and density of states of delafossite CuAlO2 and give one application as solar cell.

Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (>three weeks) compared with the N-doped thin films.

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 102 to 1.4 × 104 Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector.