Low lattice thermal conductivity and high figure of merit in p-type doped K3IO

2020 ◽  
Vol 29 (12) ◽  
pp. 126501
Author(s):  
Weiqiang Wang ◽  
Zhenhong Dai ◽  
Qi Zhong ◽  
Yinchang Zhao ◽  
Sheng Meng
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Figure ◽  
P Type

Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
State Of The Art ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Jet Propulsion ◽  
P Type ◽  
Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

Reductions in the Lattice Thermal Conductivity of Ball-milled and Shock compacted TiNiSn1−XSbX Half-Heusler alloys

2001 ◽  
Vol 691 ◽  
Author(s):  
S. Bhattacharya ◽  
Y. Xia ◽  
V. Ponnambalam ◽  
S.J. Poon ◽  
N. Thadani ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Heusler Alloys ◽  
Lattice Contribution ◽  
Grain Sizes ◽  
Shock Compaction ◽  
High Figure

ABSTRACTHalf-Heusler alloys are currently being investigated for their potential as thermoelectric materials [1], [2]. They exhibit high negative thermopower (40-250μV/K) and favorable electrical resistivity (0.1-8mW•cm) at room temperature. Attractive power factors (α2σT) of about (0.2-1.0W/m•K) at room temperature and about 4W/m•K at 600K [3] have been reported in these materials. But in order to achieve a high figure-of-merit in the half-Heusler alloys, the relatively high thermal conductivity in these materials (∼ 10 W/m•K) must be reduced. The thermal conductivity in these materials is composed of mainly a lattice contribution, compared to a very small electronic component. The challenge is to reduce the relatively high lattice thermal conductivity in these materials. Reported in this paper is a significant reduction of lattice thermal conductivity (∼1.5 - 3.5W/m•K) in some Ti-based half-Heusler alloys. Samples have been prepared by ball milling and followed by shock-compaction that has resulted into reduced grain sizes in these materials. The effects of the microstructure on the thermal transport properties of the Half-Heusler alloys have been investigated and are presented and discussed herein.

High figure of merit of monolayer Sb2Te2Se of ultra low lattice thermal conductivity

2020 ◽  
Vol 177 ◽  
pp. 109588 ◽  
Author(s):  
Bin Xu ◽  
Qiong Xia ◽  
Jing Zhang ◽  
Shanshan Ma ◽  
Yusheng Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Figure

scholarly journals Nanoarchitectonics of p-type BiSbTe with improved figure of merit via introducing PbTe nanoparticles

RSC Advances ◽  
2021 ◽  
Vol 11 (58) ◽  
pp. 36636-36643
Author(s):  
Yuanyue Li ◽  
Mengna Ren ◽  
Zhongsen Sun ◽  
Zhao Yao
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
P Type

We introduce 0.5 wt% PbTe nanoparticles into the Bi0.4Sb1.6Te3 matrix and possess an ultralow lattice thermal conductivity of 0.26 W m−1 K−1 at 429 K and an excellent ZT value of 1.6 at 482 K as well as a high average ZTave of 1.38 at 300–500 K.

scholarly journals Bipolar doping and thermoelectric properties of Zintl arsenide Eu5In2As6

2021 ◽  
Author(s):  
Naoki Tomitaka ◽  
Yosuke Goto ◽  
Kota Morino ◽  
Kazuhisa Hoshi ◽  
Yuki Nakahira ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Resistivity ◽  
Dimensionless Figure Of Merit ◽  
Recent Developments ◽  
P Type

Zintl compounds exhibit promising thermoelectric properties because of the feasibility of the chemical tuning of their electrical and thermal transport. While most Zintl pnictides are known to show p-type polarity, recent developments in high-performance n-type Mg3Sb2-based thermoelectric materials have encouraged further identification of n-type Zintl pnictides. In this study, we demonstrate the bipolar dopability of the Zintl arsenide Eu5In2As6. The electrical resistivity at 300 K with n-type polarity was decreased to 7.6 x 10^-1 ohmcm using La as an electron dopant. In contrast to the relatively high resistivity of n-type Eu5In2As6, the p-type resistivity at 300 K was decreased to 5.9 x 10^-3 ohmcm with a carrier concentration of 2.8 x 10^20 /cm3 using Zn as a hole dopant. This doping asymmetry is discussed in terms of the weighted mobility of electrons and holes. Furthermore, a very low lattice thermal conductivity of 0.7 W/mK was observed at 773 K, which is comparable to that of the Sb-containing analogue Eu5In2Sb6. The dimensionless figure of merit ZT = 0.29 at 773 K for Zn-doped p-type Eu5In2As6. This study shows that bipolar dopable Eu5In2As6 can be a platform to facilitate a better understanding of the doping asymmetry in Zintl pnictides.

Thermoelectric Properties of Two Ternary Tellurides

1998 ◽  
Vol 545 ◽  
Author(s):  
Jeff W. Sharp ◽  
Brian C. Sales ◽  
David G. Mandrus ◽  
Bryan C. Chakoumakos
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Atomic Displacement ◽  
Thermal Expansion Coefficients ◽  
Good Figure ◽  
Atomic Displacement Parameters ◽  
Binary Compounds ◽  
P Type

AbstractWe present initial assessments of the thermoelectric properties of two ternary tellurides with known crystal structures, Tl2GeTeM5 and Tl2SnTe5. Tl2SnTe5 appears to have a p-type figure of merit about the same as that of Bi2Te3, the best thermoelectric material among binary compounds. A good figure of merit is possible because the lattice thermal conductivity is very low. Based on neutron diffraction data, we have calculated atomic displacement parameters and thermal expansion coefficients. The atomic displacement parameters give some understanding of the low lattice thermal conductivity.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

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