High-resolution scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) of ZnSxSe1 −x/ZnSe Quantum Wells

1994 ◽  
Vol 3 (1-6) ◽  
pp. 183-190 ◽  
Author(s):  
B. Bollig ◽  
K. P. Geyzers ◽  
M. Heuken
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Quantum Wells ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

scholarly journals Synthesis of nanosized vanadium(v) oxide clusters below 10 nm

2019 ◽  
Vol 21 (37) ◽  
pp. 21104-21108 ◽  
Author(s):  
Maximilian Lasserus ◽  
Daniel Knez ◽  
Florian Lackner ◽  
Martin Schnedlitz ◽  
Roman Messner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Helium Droplets ◽  
Transmission Electron ◽  
Mean Diameter ◽  
Scanning Transmission ◽  
Electron Energy Loss

Vanadium oxide clusters with a mean diameter below 10 nm are created in helium droplets, and after deposition, studied by Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and UV-vis absorption spectroscopy.

Analysis of AlxGa1-xN nanowires through simulated methods of scanning transmission electron microscopy and electron energy-loss spectroscopy

2013 ◽  
Vol 6 (1) ◽  
Author(s):  
R. Kumar ◽  
P.J. Phillips ◽  
R.F. Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

AlxGa1-xN nanowires have promising applications in ultraviolet light emitting diodes (LEDs). However, these nanowires are not typical p-n junction semiconductors, but rather rely on varying concentrations of Al versus Ga to produce electron hole pairs. More information on the atomic structure is needed to better understand the properties of these nanowires. In this study, AlxGa1-xN nanowires were imaged using scanning transmission electron microscopy (STEM) and compared to computer simulated STEM images to obtain physical information on the nanowires. Electron energy-loss spectroscopy (EELS) and FEFF9 computer simulations were also performed to better understand the structural and chemical properties of the nanowires. Results from these simulations showed that changes in the chemical ordering of the nanowires were responsible for changes in intensity and resolution in the images. These intensity and resolution trends were not a result of interface effects. This will help to further characterize nanowires in the future.

Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene

2014 ◽  
Vol 1714 ◽  
Author(s):  
Giuseppe Nicotra ◽  
Quentin M. Ramasse ◽  
Mario Scuderi ◽  
Paolo Longo ◽  
Ioannis Deretzis ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Amorphous Film ◽  
Atomic Scale ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

ABSTRACTAtomic-resolution structural and spectroscopic characterization techniques (scanning transmission electron microscopy and electron energy loss spectroscopy) are combined with nanoscale electrical measurements (conductive atomic force microscopy) to study at the atomic scale the properties of graphene grown epitaxially through the controlled graphitisation of Si-face and C-face hexagonal SiC(0001) substrates by high temperature annealing. A scanning transmission electron microscopy analysis, carried out at 60KeV of beam energy, below the knock-on threshold for carbon to ensure no damage is imparted to the film by the electron beam, demonstrates that the buffer layer present on the planar SiC(0001) Si-face delaminates from it on the (11-2n) facets of SiC surface steps, In addition, electron energy loss spectroscopy reveals that the delaminated layer has a similar electronic configuration to purely sp2-hybridized graphene. A thin amorphous film is found on the C-face, instead, which strongly suppresses epitaxy with the SiC substrate. Structurally, the amorphous area is inhomgeneous, as its Si-concentration gradually decreases while approaching the first graphene layer, which is purely sp2-hybridized. Based on these features, we discuss differences and similarities between the C-only buffer layer that forms on the Si-face of SiC with respect to the thicker C/Si amorphous film of the C-face.

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