Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine

Journal of The Electrochemical Society ◽

10.1149/1.2133040 ◽

1976 ◽

Vol 123 (8) ◽

pp. 1227-1231 ◽

Author(s):

Yoshiro Nakayama ◽

Shinji Ohkawa ◽

Hisao Hashimoto ◽

Hajime Ishikawa

Keyword(s):

Epitaxial Layer ◽

Gaas Epitaxial Layer

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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Journal of Luminescence ◽

10.1016/j.jlumin.2010.09.022 ◽

2011 ◽

Vol 131 (3) ◽

pp. 531-534

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Carrier Transport ◽

Transport Processes ◽

Layer Structures ◽

Frequency Tunable ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00707-3 ◽

2001 ◽

Vol 86 (3) ◽

pp. 228-231 ◽

Author(s):

R. Singh ◽

S.K. Arora ◽

J.P. Singh ◽

Renu Tyagi ◽

S.K. Agarwal ◽

...

Keyword(s):

Experimental Investigation ◽

Epitaxial Layer ◽

Hall Measurements ◽

Gaas Epitaxial Layer

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Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.366841 ◽

1998 ◽

Vol 83 (3) ◽

pp. 1384-1389 ◽

Author(s):

H. Nakano ◽

T. Sakamoto ◽

K. Taniguchi

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Spectroscopic Ellipsometry ◽

Nondestructive Measurement ◽

Infrared Spectroscopic ◽

Measurement Of Thickness ◽

Gaas Epitaxial Layer

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ChemInform Abstract: HALL EFFECTS, SCHOTTKY BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION

Chemischer Informationsdienst ◽

10.1002/chin.197447018 ◽

1974 ◽

Vol 5 (47) ◽

pp. no-no

Author(s):

T. KATODA ◽

T. SUGANO

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Photoluminescence Spectra ◽

Hall Effects ◽

Barrier Capacitance ◽

Gaas Epitaxial Layer

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A Method for Determining a GaAs Epitaxial Layer Impurity Profile

Japanese Journal of Applied Physics ◽

10.1143/jjap.14.991 ◽

1975 ◽

Vol 14 (7) ◽

pp. 991-998 ◽

Author(s):

Akiyasu Yamashita ◽

Tatsuo Aoki ◽

Masao Yamaguchi

Keyword(s):

Epitaxial Layer ◽

Impurity Profile ◽

Gaas Epitaxial Layer

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Hall Effect, Schottky Barrier Capacitance, and Photoluminescence Spectra Measurements for GaAs Epitaxial Layer and Their Correlation

Journal of The Electrochemical Society ◽

10.1149/1.2401978 ◽

1974 ◽

Vol 121 (8) ◽

pp. 1066 ◽

Author(s):

T. Katoda ◽

T. Sugano

Keyword(s):

Hall Effect ◽

Schottky Barrier ◽

Epitaxial Layer ◽

Photoluminescence Spectra ◽

Barrier Capacitance ◽

Gaas Epitaxial Layer

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Growth and optical studies of a GaAs epitaxial layer on porous Si(100) grown by molecular beam epitaxy

Journal of Materials Science Letters ◽

10.1007/bf00728719 ◽

1992 ◽

Vol 11 (7) ◽

pp. 392-395 ◽

Author(s):

T. W. Kang ◽

Y. T. Oh ◽

J. Y. Leem ◽

T. W. Kim

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Layer ◽

Molecular Beam ◽

Porous Si ◽

Optical Studies ◽

Gaas Epitaxial Layer

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Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.082001 ◽

2010 ◽

Vol 49 (8) ◽

pp. 082001 ◽

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Syuuichi Tsuruta ◽

Hisashi Yamada ◽

Masahiko Hata ◽

...

Keyword(s):

Frequency Shift ◽

Epitaxial Layer ◽

Electromagnetic Waves ◽

Carrier Transport ◽

Layer Structures ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.432 ◽

1986 ◽

Vol 25 (Part 1, No. 3) ◽

pp. 432-434 ◽

Author(s):

Kazuo Masaki ◽

Shunsuke Miyamoto

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Cell Voltage ◽

Thickness Measurements ◽

Gaas Epitaxial Layer

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Simple and direct estimation method for split‐off hole effective mass from Franz‐Keldysh oscillations appearing in photoreflectance spectra: Feasibility study using GaAs epitaxial layer structures at room temperature

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac1b14 ◽

2021 ◽

Author(s):

Hideo Takeuchi ◽

Sotaro Fujiwara

Keyword(s):

Effective Mass ◽

Feasibility Study ◽

Epitaxial Layer ◽

Room Temperature ◽

Estimation Method ◽

Hole Effective Mass ◽

Direct Estimation ◽

Layer Structures ◽

Gaas Epitaxial Layer

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