ChemInform Abstract: Thermal Stability of Electroless Nickel-Molybdenum-Phosphorus Alloy Films.

1986 ◽  
Vol 17 (35) ◽  
Author(s):  
I. KOIWA ◽  
M. NISHIKAWA ◽  
K. YAMADA ◽  
T. OSAKA
1986 ◽  
Vol 59 (1) ◽  
pp. 133-137 ◽  
Author(s):  
Ichiro Koiwa ◽  
Masao Nishikawa ◽  
Keizo Yamada ◽  
Tetsuya Osaka

2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.


1976 ◽  
Vol 3 (2) ◽  
pp. 103-111 ◽  
Author(s):  
J. Dearden

Electroless processes for the deposition of metal films onto insulators have been known for many years. Various aspects of this technology have been applied in the field of resistor technology leading to improved performance of existing resistors and the evaluation of new resistors with novel characteristics.The applications of electroless nickel as a readily solderable, completely ohmic contact for tin oxide resistors is described.Copper oxide layers produced from oxidised electroless copper are shown to improve the thermal stability of tin oxide resistors.A range of electroless high precision metal film resistors from a fraction of an ohm to 100 kohm per square and from a few millimetres in length to over 1 metre is shown to be feasible. This technology has been applied to the manufacture of thin film circuits.The outstanding thermal stability of the electroless nickel-boron films and their temperature coefficient of resistance indicates a potential application in the field of temperature sensors.The ability to produce “weightless” films on Mylar sheet at 10 Gohm per square is considered to be a solution to the charge distribution requirement for electrostatic loudspeakers.


2003 ◽  
Vol 6 (10) ◽  
pp. G122 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

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