ChemInform Abstract: Various Synthetic Methods for One-Dimensional Semiconductor Nanowires/Nanorods and Their Applications in Photovoltaic Devices

ChemInform ◽  
2010 ◽  
Vol 41 (48) ◽  
pp. no-no
Author(s):  
Jinyoung Chun ◽  
Jinwoo Lee
Keyword(s):  
Semiconductor Nanowires ◽  
Synthetic Methods ◽  
Photovoltaic Devices ◽  
One Dimensional

Enhanced Light Harvesting in Photovoltaic Devices Using an Edge-Located One-Dimensional Grating Polydimethylsiloxane Membrane

2019 ◽  
Vol 11 (39) ◽  
pp. 36020-36026 ◽  
Author(s):  
Yeong Jae Kim ◽  
Young Jin Yoo ◽  
Dong Eun Yoo ◽  
Dong Wook Lee ◽  
Min Seok Kim ◽  
...  
Keyword(s):  
Light Harvesting ◽  
Photovoltaic Devices ◽  
One Dimensional

Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

2008 ◽  
Vol 8 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Y. Liu ◽  
Z. Y. Zhang ◽  
Y. F. Hu ◽  
C. H. Jin ◽  
L.-M. Peng
Keyword(s):  
Quantitative Analysis ◽  
Carrier Density ◽  
Semiconductor Nanowires ◽  
Schottky Barriers ◽  
Metal Electrodes ◽  
One Dimensional ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Semiconducting Nanostructures ◽  
Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

Semiconductor nanowires for novel one-dimensional devices

2004 ◽  
Vol 21 (2-4) ◽  
pp. 560-567 ◽  
Author(s):  
L Samuelson ◽  
M.T Björk ◽  
K Deppert ◽  
M Larsson ◽  
B.J Ohlsson ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional

scholarly journals Ultralong spin lifetimes in one-dimensional semiconductor nanowires

2019 ◽  
Vol 114 (20) ◽  
pp. 202101 ◽  
Author(s):  
Florian Dirnberger ◽  
Michael Kammermeier ◽  
Jan König ◽  
Moritz Forsch ◽  
Paulo E. Faria Junior ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional

Multisegmented One-Dimensional Nanorods Prepared by Hard-Template Synthetic Methods

ChemInform ◽  
2006 ◽  
Vol 37 (30) ◽  
Author(s):  
Sarah J. Hurst ◽  
Emma Kathryn Payne ◽  
Lidong Qin ◽  
Chad A. Mirkin
Keyword(s):  
Synthetic Methods ◽  
Hard Template ◽  
One Dimensional

scholarly journals One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires

2011 ◽  
Vol 108 (25) ◽  
pp. 10050-10055 ◽  
Author(s):  
L. K. van Vugt ◽  
B. Piccione ◽  
C.-H. Cho ◽  
P. Nukala ◽  
R. Agarwal
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional ◽  
Coupling Strengths

scholarly journals Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1400 ◽  
Author(s):  
Ziyuan Li ◽  
Jeffery Allen ◽  
Monica Allen ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Semiconductor Nanowires ◽  
Device Performance ◽  
Optical And Electrical Properties ◽  
Future Perspectives ◽  
Material Synthesis ◽  
One Dimensional ◽  
Single Nanowire ◽  
Tunable Bandgap

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

2012 ◽  
Vol 22 (34) ◽  
pp. 17813 ◽  
Author(s):  
Jing Li ◽  
Haizheng Zhong ◽  
Huijuan Liu ◽  
Tianyou Zhai ◽  
Xi Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Nanowires ◽  
Optical And Electrical Properties ◽  
One Dimensional
Sign in / Sign up

Export Citation Format

Share Document