Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

2008 ◽  
Vol 8 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Y. Liu ◽  
Z. Y. Zhang ◽  
Y. F. Hu ◽  
C. H. Jin ◽  
L.-M. Peng
Keyword(s):  
Quantitative Analysis ◽  
Carrier Density ◽  
Semiconductor Nanowires ◽  
Schottky Barriers ◽  
Metal Electrodes ◽  
One Dimensional ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Semiconducting Nanostructures ◽  
Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

Photocurrent Enhancement between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector

2013 ◽  
Vol 684 ◽  
pp. 265-268
Author(s):  
Narin Atiwongsangthong ◽  
Surasak Niemcharoen
Keyword(s):  
Optical Signal ◽  
Schottky Barriers ◽  
Visible Range ◽  
Avalanche Multiplication ◽  
Low Frequencies ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Noise Measurements ◽  
Signal Demodulation ◽  
Msm Photodetector

Gain properties of dc and ac photocurrent generated between two Schottky barriers coplanarly placed on silicon metal-semiconductor-metal photodetector have been investigated experimentally. The test structure has two square Mo/n-Si Schottky barrier junctions on an n-type silicon substrate with a resistivity of 9-12 Ω-cm and the junction internal separation is 20 m. The current-voltage (I-V) characteristics under illumination in visible range showed a rapid increase in the photocurrent at higher bias region. From the I-V characteristics and noise measurements, increase in photocurrent was ascribed to avalanche multiplication of carriers photogenerated in the reverse-biased Schottky junction. From observation of optical signal demodulation at low frequencies (10 kHz and 50 kHz), it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved respectively.

scholarly journals Gate-tunable plasmons in mixed-dimensional van der Waals heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sheng Wang ◽  
SeokJae Yoo ◽  
Sihan Zhao ◽  
Wenyu Zhao ◽  
Salman Kahn ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carrier Density ◽  
Electromagnetic Interaction ◽  
Luttinger Liquid ◽  
Fundamental Physics ◽  
Metallic Structures ◽  
One Dimensional ◽  
Figures Of Merit ◽  
Electrostatic Gating ◽  
Plasmon Dispersion

AbstractSurface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light–matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.

Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 907-910
Author(s):  
Sergey P. Tumakha ◽  
L.M. Porter ◽  
D.J. Ewing ◽  
Qamar-ul Wahab ◽  
X.Y. Ma ◽  
...  
Keyword(s):  
Surface Defect ◽  
Deep Level ◽  
Polarized Light ◽  
Schottky Barriers ◽  
Double Barrier ◽  
Barrier Heights ◽  
Current Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Morphological Defects ◽  
Additional Defect

We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to correlate subsurface deep level emissions and double barrier current-voltage (I-V) characteristics across an array of Ni/4H-SiC diodes on the same epitaxial wafer. These results demonstrate not only a correspondence between these optical features and measured barrier heights, but they also suggest that such states may limit the range of SB heights in general. DRCLS of near-ideal diodes show a broad 2.45 eV emission at common to all diode areas and associated with either impurities or inclusions. Strongly non-ideal diodes exhibit additional defect emissions at 2.2 and 2.65 eV. On the other hand, there is no correlation between the appearance of morphological defects observed by polarized light microscopy or X-ray topography and the presence of double barrier characteristics. The DRCLS observations of defect level transitions that correlate with non-ideal Schottky barriers suggest that these sub-surface defect features can be used to predict Schottky barrier behavior.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

Sign in / Sign up

Export Citation Format

Share Document