Semiconductor nanowires for novel one-dimensional devices

2004 ◽  
Vol 21 (2-4) ◽  
pp. 560-567 ◽  
Author(s):  
L Samuelson ◽  
M.T Björk ◽  
K Deppert ◽  
M Larsson ◽  
B.J Ohlsson ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional

Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

2008 ◽  
Vol 8 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Y. Liu ◽  
Z. Y. Zhang ◽  
Y. F. Hu ◽  
C. H. Jin ◽  
L.-M. Peng
Keyword(s):  
Quantitative Analysis ◽  
Carrier Density ◽  
Semiconductor Nanowires ◽  
Schottky Barriers ◽  
Metal Electrodes ◽  
One Dimensional ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Semiconducting Nanostructures ◽  
Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

scholarly journals Ultralong spin lifetimes in one-dimensional semiconductor nanowires

2019 ◽  
Vol 114 (20) ◽  
pp. 202101 ◽  
Author(s):  
Florian Dirnberger ◽  
Michael Kammermeier ◽  
Jan König ◽  
Moritz Forsch ◽  
Paulo E. Faria Junior ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional

scholarly journals One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires

2011 ◽  
Vol 108 (25) ◽  
pp. 10050-10055 ◽  
Author(s):  
L. K. van Vugt ◽  
B. Piccione ◽  
C.-H. Cho ◽  
P. Nukala ◽  
R. Agarwal
Keyword(s):  
Semiconductor Nanowires ◽  
One Dimensional ◽  
Coupling Strengths

scholarly journals Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1400 ◽  
Author(s):  
Ziyuan Li ◽  
Jeffery Allen ◽  
Monica Allen ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Semiconductor Nanowires ◽  
Device Performance ◽  
Optical And Electrical Properties ◽  
Future Perspectives ◽  
Material Synthesis ◽  
One Dimensional ◽  
Single Nanowire ◽  
Tunable Bandgap

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

2012 ◽  
Vol 22 (34) ◽  
pp. 17813 ◽  
Author(s):  
Jing Li ◽  
Haizheng Zhong ◽  
Huijuan Liu ◽  
Tianyou Zhai ◽  
Xi Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Nanowires ◽  
Optical And Electrical Properties ◽  
One Dimensional

scholarly journals Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sebastian Heedt ◽  
Marina Quintero-Pérez ◽  
Francesco Borsoi ◽  
Alexandra Fursina ◽  
Nick van Loo ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Superconducting Gap ◽  
Zero Bias ◽  
Quantum Devices ◽  
One Dimensional ◽  
Chip Fabrication ◽  
Zero Bias Conductance ◽  
On Chip ◽  
The One ◽  
Multiple Andreev Reflections

AbstractThe realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.

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