ChemInform Abstract: Molecular and Supramolecular Architectures of Organic Semiconductors for Field-Effect Transistor Devices and Sensors: A Synthetic Chemical Perspective

ChemInform ◽  
2011 ◽  
Vol 42 (17) ◽  
pp. no-no
Author(s):  
Alessandra Operamolla ◽  
Gianluca M. Farinola
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Supramolecular Architectures ◽  
Effect Transistor

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

Effect of thiophene/furan substitution on organic field effect transistor properties of arylthiadiazole based organic semiconductors

2020 ◽  
Vol 8 (48) ◽  
pp. 17297-17306
Author(s):  
Anna Pachariyangkun ◽  
Masayuki Suda ◽  
Sarinya Hadsadee ◽  
Siriporn Jungsuttiwong ◽  
Phattananawee Nalaoh ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Channel Layer ◽  
Effect Transistor

This study determines that furan could display comparable charge transport properties to its thiophene analogue. The OFET device employing furan-substituted benzothiadiazole as the channel layer showed a mobility (μmax) of 0.0122 cm2 V−1 s−1.

Bisperfluorophenyl-Substituted Thiophene Oligomers. Organic Semiconductors with Complementary-Type Carrier Mobility

2002 ◽  
Vol 736 ◽  
Author(s):  
Antonio Facchetti ◽  
Howard E. Katz ◽  
Tobin J. Marks
Keyword(s):  
Thin Films ◽  
Cyclic Voltammetry ◽  
Molecular Characterization ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Photoluminescence Spectroscopy ◽  
Design Synthesis ◽  
Effect Transistor

ABSTRACTThe design, synthesis, and properties of two mixed perfluorophenyl-thiophene oligomers 5,5″′-diperfluorophenyl-2,2′:5′,2″:5″,2″′:5″′,2″″:5″″,2″″′-quaterthiophene (2) and 5,5′-bis{1-[4-(thien-2-yl)-2,3,5,6-tetrafluorophenyl)] }-2,2′-dithiophene (3) are presented. Molecular characterization included the following techniques: multinuclear NMR, DSC and TGA, optical UV-Vis and photoluminescence spectroscopy, and cyclic voltammetry. Thin films can be easily grown by vacuum evaporation and have been characterized by optical UV-Vis and photoluminescence, XRD, and field-effect transistor measurements. Electron and hole mobilities of 0.06–0.08 cm2/(V s) and 0.001–0.003 cm2/(V s) were found for 2 and 3, respectively.

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