scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Mixed-Dimensional WS2/GaSb Heterojunction for High-performance p-n Diode and Junction Field-Effect Transistor

2022 ◽  
Author(s):  
Zichao Cheng ◽  
Xiufeng Song ◽  
Lianfu Jiang ◽  
Lude Wang ◽  
Jiamin Sun ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Effect Transistor ◽  
P Type ◽  
Silicon Based

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, due to the continued miniaturization of circuits, such as avoiding complex dielectric engineering,...

Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

2006 ◽  
Vol 955 ◽  
Author(s):  
Shuichi Miura ◽  
Takahiro Fujii ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Signal To Noise Ratio ◽  
High Signal ◽  
Dark Current Density ◽  
Effect Transistor ◽  
P Type

ABSTRACTAn AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

scholarly journals Stencil mask defined doctor blade printing of organic single crystal array for high-performance organic field-effect transistors

2021 ◽  
Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic P ◽  
Organic Field Effect Transistors ◽  
Stencil Mask ◽  
Organic Single Crystal ◽  
Effect Transistor ◽  
Amorphous Si

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...

scholarly journals Zn(ii) and Cu(ii) complexes of a new thiophene-based salphen-type ligand: solution-processable high-performance field-effect transistor materials

2014 ◽  
Vol 50 (53) ◽  
pp. 7036-7039 ◽  
Author(s):  
Ashish K. Asatkar ◽  
Satyaprasad P. Senanayak ◽  
Anjan Bedi ◽  
Snigdha Panda ◽  
K. S. Narayan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Organic field-effect transistor (OFET) devices based on solution-processed Cu(ii) and Zn(ii) complexes of a new thiophene-based salphen-type ligand exhibited high p-type mobilities (up to 1.5 cm2V−1s−1).

scholarly journals Photoresponse Dimensionality of Organic Field-Effect Transistor

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7465
Author(s):  
Tomas Vincze ◽  
Michal Micjan ◽  
Juraj Nevrela ◽  
Martin Donoval ◽  
Martin Weis
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors ◽  
Effect Transistor ◽  
Absorption Characteristics

Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device.

2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Central Unit ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs)

2017 ◽  
Vol 53 (43) ◽  
pp. 5898-5901 ◽  
Author(s):  
Sureshraju Vegiraju ◽  
Deng-Yi Huang ◽  
Pragya Priyanka ◽  
Yo-Shan Li ◽  
Xian-Lun Luo ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable

DDTT-TTARexhibits the highest mobility of 0.81 cm2V−1s−1.

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