scholarly journals Inside Back Cover: High-resolution Raman Spectroscopy for the Nanostructural Characterization of Explosive Nanodiamond Precursors (ChemPhysChem 2/2017)

ChemPhysChem ◽  
2017 ◽  
Vol 18 (2) ◽  
pp. 265-265
Author(s):  
Tanja Deckert-Gaudig ◽  
Vincent Pichot ◽  
Denis Spitzer ◽  
Volker Deckert
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Back Cover

Evaluation of Very High Resolution Multi-Wavelength Raman Spectroscopy for In-Line Characterization of Patterned Epitaxial Si1-xGex Layers on Si(100) Wafers

2019 ◽  
Vol 35 (2) ◽  
pp. 205-212 ◽  
Author(s):  
Victor Vartanian ◽  
Takeshi Ueda ◽  
Toshikazu Ishigaki ◽  
Kitaek Kang ◽  
Woo Sik Yoo
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Multi Wavelength ◽  
Very High

High-resolution Raman Spectroscopy for the Nanostructural Characterization of Explosive Nanodiamond Precursors

ChemPhysChem ◽  
2016 ◽  
Vol 18 (2) ◽  
pp. 175-178 ◽  
Author(s):  
Tanja Deckert-Gaudig ◽  
Vincent Pichot ◽  
Denis Spitzer ◽  
Volker Deckert
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

2009 ◽  
Vol 30 (7) ◽  
pp. 073001 ◽  
Author(s):  
Duan Huantao ◽  
Gu Wenping ◽  
Zhang Jincheng ◽  
Hao Yue ◽  
Chen Chi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution

Stress Characterization of Tungsten-Filled Through Silicon via Arrays Using Very High Resolution Multi-Wavelength Raman Spectroscopy

2019 ◽  
Vol 35 (2) ◽  
pp. 105-115 ◽  
Author(s):  
Jeff Gambino ◽  
Daniel Vanslette ◽  
Bucknell Webb ◽  
Cameron Luce ◽  
Takeshi Ueda ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Through Silicon Via ◽  
Multi Wavelength ◽  
Very High

Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics

1996 ◽  
Vol 421 ◽  
Author(s):  
J. Wagner ◽  
J. Schmitz ◽  
F. Fuchs ◽  
U. Weimar ◽  
N. Herres ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.

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