S. Adachi (ed.). Properties of Aluminium Gallium Arsenide. (EMIS Datareviews Series No. 7). INSPEC; The Institution of Electrical Engineers, London 1993. 325 S., 58 Abb., 93 Tab. ISBN 0 85296 558 3, L 95

H. Neumann

doi:10.1002/crat.2170280617

S. Adachi (ed.). Properties of Aluminium Gallium Arsenide. (EMIS Datareviews Series No. 7). INSPEC; The Institution of Electrical Engineers, London 1993. 325 S., 58 Abb., 93 Tab. ISBN 0 85296 558 3, L 95

Crystal Research and Technology ◽

10.1002/crat.2170280617 ◽

1993 ◽

Vol 28 (6) ◽

pp. 866-866 ◽

Cited By ~ 1

Author(s):

H. Neumann

Keyword(s):

Gallium Arsenide ◽

Aluminium Gallium Arsenide ◽

Electrical Engineers

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Properties of Lattice-matched and Strained Indium Gallium Arsenide by P. Bhattacharya (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-865-5; Properties of Indium Phosphide, London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-491-9; Properties of Aluminium Gallium Arsenide by S. Adachi (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-558-3

Microelectronics Journal ◽

10.1016/s0026-2692(99)00043-9 ◽

1999 ◽

Vol 30 (12) ◽

pp. 1273-1274

Author(s):

M Henini

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Aluminium Gallium Arsenide ◽

Electrical Engineers ◽

Indium Gallium ◽

Lattice Matched

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Changeover from acoustic to optic mode phonon emission by a hot two-dimensional electron gas in the gallium arsenide/aluminium gallium arsenide heterojunction

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3b/007 ◽

1992 ◽

Vol 7 (3B) ◽

pp. B29-B32 ◽

Cited By ~ 50

Author(s):

P Hawker ◽

A J Kent ◽

O H Hughes ◽

L J Challis

Keyword(s):

Gallium Arsenide ◽

Electron Gas ◽

Aluminium Gallium Arsenide ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Phonon Emission ◽

Dimensional Electron Gas

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Specifics of obtaining lightly-doped aluminium gallium arsenide layers for photodetectors

Engineering Journal Science and Innovation ◽

10.18698/2308-6033-2017-6-1628 ◽

2017 ◽

Author(s):

С.С. Стрельченко ◽

◽

Н.И. Шумакин ◽

Keyword(s):

Gallium Arsenide ◽

Aluminium Gallium Arsenide

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Pallab Bhattacharya (ed.). Properties of lattice-matched and strained indium gallium arsenide. Electronic Materials Information Service, EMIS Datareviews Series No. 8 (Series Advisor: Dr. B. L. Weiss). INSPEC, the Institution of Electrical Engineers, Michael Farday House, Six Hills Way, Stevenage, Herts SG1 2AY, United Kingtom, 1993, 317 Seiten, zahlreiche Abbildungen und Tabellen, Quellennachweise, Sachwörterverzeichnis, ISBN 0-85296-865-5, Preis: 115 £

Crystal Research and Technology ◽

10.1002/crat.2170290523 ◽

1994 ◽

Vol 29 (5) ◽

pp. 702-702 ◽

Cited By ~ 2

Author(s):

V. Gottschalch

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Electronic Materials ◽

Information Service ◽

Electrical Engineers ◽

Indium Gallium ◽

Lattice Matched

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A comparative study of the noise performance of aluminium-gallium-arsenide/gallium-arsenide high electron mobility transistors with and without superconducting gate electrodes

IEEE Electron Device Letters ◽

10.1109/55.145051 ◽

1992 ◽

Vol 13 (5) ◽

pp. 273-275 ◽

Cited By ~ 1

Author(s):

L.O.A. Myer ◽

M.G. Spencer ◽

J.A. Griffin

Keyword(s):

Gallium Arsenide ◽

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Aluminium Gallium Arsenide ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

Gate Electrodes ◽

Electron Mobility Transistors

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ALUMINIUM GALLIUM ARSENIDE (AlxGa1−xAs)

Handbook Series on Semiconductor Parameters ◽

10.1142/9789812832085_0001 ◽

1996 ◽

pp. 1-36 ◽

Cited By ~ 6

Author(s):

Yu. A. Goldberg

Keyword(s):

Gallium Arsenide ◽

Aluminium Gallium Arsenide

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Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

Photonics for Quantum ◽

10.1117/12.2603537 ◽

2021 ◽

Author(s):

Lin Chang

Keyword(s):

Gallium Arsenide ◽

Aluminium Gallium Arsenide ◽

Quantum Photonics

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FIELD AND THERMIONIC FIELD TRANSPORT IN ALUMINIUM GALLIUM ARSENIDE HETEROJUNCTION BARRIERS

Advanced Semiconductor Devices ◽

10.1142/9789812770332_0008 ◽

2007 ◽

Author(s):

D. V. MORGAN ◽

A. PORCH

Keyword(s):

Gallium Arsenide ◽

Aluminium Gallium Arsenide

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Aluminium gallium arsenide waveguide designs for efficient four-wave mixing

2015 Photonics North ◽

10.1109/pn.2015.7292529 ◽

2015 ◽

Cited By ~ 1

Author(s):

Kashif M. Awan ◽

Norbert Feher ◽

Robert Boyd ◽

Ksenia Dolgaleva

Keyword(s):

Gallium Arsenide ◽

Four Wave Mixing ◽

Aluminium Gallium Arsenide ◽

Wave Mixing

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Evidence for the neutral charge state model of the DX center in aluminium gallium arsenide

Solid State Communications ◽

10.1016/0038-1098(90)90099-w ◽

1990 ◽

Vol 76 (5) ◽

pp. 609-612 ◽

Cited By ~ 5

Author(s):

S. Subramanian ◽

S. Anand ◽

B.M. Arora

Keyword(s):

Gallium Arsenide ◽

Charge State ◽

Aluminium Gallium Arsenide ◽

State Model ◽

Dx Center ◽

Neutral Charge State

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