A comparative study of the noise performance of aluminium-gallium-arsenide/gallium-arsenide high electron mobility transistors with and without superconducting gate electrodes

1992 ◽  
Vol 13 (5) ◽  
pp. 273-275 ◽  
Author(s):  
L.O.A. Myer ◽  
M.G. Spencer ◽  
J.A. Griffin
Keyword(s):  
Gallium Arsenide ◽  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Aluminium Gallium Arsenide ◽  
High Electron ◽  
Noise Performance ◽  
High Electron Mobility ◽  
Gate Electrodes ◽  
Electron Mobility Transistors

scholarly journals Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125231
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 315-317 ◽  
Author(s):  
Thanh Ngoc Thi Do ◽  
Anna Malmros ◽  
Piero Gamarra ◽  
Cedric Lacam ◽  
Marie-Antoinette Di Forte-Poisson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Surface Passivation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Noise Performance ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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