An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model

2015 ◽  
Vol 30 (1) ◽  
pp. e2127 ◽  
Author(s):  
Zhang Wen ◽  
Yuehang Xu ◽  
Changsi Wang ◽  
Xiaodong Zhao ◽  
Ruimin Xu
Keyword(s):  
Equivalent Circuit ◽  
Extraction Method ◽  
Equivalent Circuit Model ◽  
Parameter Extraction ◽  
Circuit Model ◽  
Small Signal ◽  
Gan Hemt

scholarly journals Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 836
Author(s):  
Jiamian Sun ◽  
Haiwang Li ◽  
Sifan Wu ◽  
Tiantong Xu ◽  
Hanqing Li ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Circuit Design ◽  
Extraction Method ◽  
Unit Area ◽  
Equivalent Circuit Model ◽  
Parameter Extraction ◽  
Circuit Model ◽  
Proximity Effects ◽  
Design System ◽  
Lumped Element

Integrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, is inadequate. This type of inductor can thus not be incorporated into fast computer-aided design (CAD)-assisted circuit design. In this study, we propose a broadband two-port physics-based equivalent circuit model for 3D microelectromechanical system (MEMS) in-chip solenoid inductors that are embedded in silicon substrates. The circuit model was composed of lumped elements with specific physical meanings and incorporated complicated parasitics resulting from eddy currents, skin effects, and proximity effects. Based on this model, we presented a lumped-element parameter extraction method using the electronic design automation software package, Agilent Advanced Design System (ADS). This method proved to be consistent with the results of two-port testing at low to self-resonant frequencies and could thus be used in CAD-assisted circuit design. The lumped element value variations were analyzed based on the physical meaning of the elements with respect to variations in structures and the substrate resistivity of inductors. This provided a novel perspective in terms of the design of integrated in-chip solenoid inductors.

scholarly journals A New Parameter-Extraction Method for DGS and its Application to the Low-Pass Filter

2004 ◽  
Vol 27 (2) ◽  
pp. 119-123 ◽  
Author(s):  
Haiwen Liu ◽  
Xiaowei Sun ◽  
Zhengfan Li
Keyword(s):  
Equivalent Circuit ◽  
Extraction Method ◽  
Circuit Simulation ◽  
Equivalent Circuit Model ◽  
Design Procedure ◽  
Parameter Extraction ◽  
Defected Ground Structure ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass

A new and simple parameter-extraction method for the equivalent circuit of defected ground structure (DGS) is presented. Using this method, circuit simulation, based on the DGS equivalent-circuit model, show excellent agreements with the electromagnetic (EM) simulation. Further, our method is applied effectively to design a low-pass filter (LPF) with DGS. Comparison between simulation and measurement confirm the validity of the LPF configuration and design procedure. Simple structure and high power handling capability are obtained from the proposed LPF.

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