AbstractPure Al and Cu films evaporated on thin glass and thermally oxidized silicon substrates are subject to changes in temperature Ṫ>100Ks-1. With constant temperature the stress relaxation is between 1 and 10 % of the thermally induced stress. The stationary creep rates are comparable to diffusion controlled power-law creep. The discontinuous grain growth during the T cycling shifts the transient amplitudes and the stationary slopes of stress to negative values. DC resistance measurements indicate the production and annihilation of vacancies.
Temperature dependent change in equilibrium elastic modulus after thermally induced stress relaxation in porcine septal cartilage
