Thermally induced stress relaxation and densification of spin-on-glass thin films

2000 ◽  
Vol 76 (4) ◽  
pp. 430-432 ◽  
Author(s):  
C. K. Chiang ◽  
W. E. Wallace ◽  
G. W. Lynn ◽  
D. Feiler ◽  
W. Xia
Polymer ◽  
2001 ◽  
Vol 42 (1) ◽  
pp. 319-328 ◽  
Author(s):  
H. Chung ◽  
C. Lee ◽  
H. Han

2009 ◽  
Vol 57 (4) ◽  
pp. 1209-1219 ◽  
Author(s):  
R. Gremaud ◽  
M. Gonzalez-Silveira ◽  
Y. Pivak ◽  
S. de Man ◽  
M. Slaman ◽  
...  

2007 ◽  
Vol 90 (18) ◽  
pp. 181910 ◽  
Author(s):  
B. Abendroth ◽  
H. U. Jäger ◽  
W. Möller ◽  
M. Bilek

1984 ◽  
Vol 40 ◽  
Author(s):  
Hartmann Hieber

AbstractPure Al and Cu films evaporated on thin glass and thermally oxidized silicon substrates are subject to changes in temperature Ṫ>100Ks-1. With constant temperature the stress relaxation is between 1 and 10 % of the thermally induced stress. The stationary creep rates are comparable to diffusion controlled power-law creep. The discontinuous grain growth during the T cycling shifts the transient amplitudes and the stationary slopes of stress to negative values. DC resistance measurements indicate the production and annihilation of vacancies.


1990 ◽  
Vol 188 ◽  
Author(s):  
Richard Haynes

1. IntroductionIn VLSI processing and other applications such as printed circuit boards thin films of copper, usually used as conductors, undergo thermal cycling. This thermal cycling can cause loss of adhesion and mechanical failures thus decreasing reliability of the devices[l–7]. Understanding thermally induced stress due to mismatch of thermal expansion may assist in generating designs, processes and material replacement for increased reliability. This paper reports studies of the temperature dependence of stresses for plated and sputtered copper and plated copper-silver and copper-tin alloys. Studies of thermally annealed plated copper and copper-tin alloys are also reported.


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