New Fluoropolymers Having Both Low Water Uptake and a Low Dielectric Constant

2015 ◽  
Vol 216 (23) ◽  
pp. 2302-2308 ◽  
Author(s):  
Fengkai He ◽  
Kaikai Jin ◽  
Jiajia Wang ◽  
Yijie Luo ◽  
Jing Sun ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Low Dielectric Constant ◽  
Low Dielectric

A Bio-Based Allylphenol (Eugenol)-Functionalized Fluorinated Maleimide with Low Dielectric Constant and Low Water Uptake

2018 ◽  
Vol 219 (20) ◽  
pp. 1800252 ◽  
Author(s):  
Linxuan Fang ◽  
Junfeng Zhou ◽  
Jiajia Wang ◽  
Jing Sun ◽  
Qiang Fang
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Low Dielectric Constant ◽  
Low Dielectric

Bismaleimide/Allylnadic-Imide Blends Yield Low Dielectric Constant And Low Water Uptake

1991 ◽  
Vol 227 ◽  
Author(s):  
J-PH Ansermet ◽  
A. Kramer
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Water Uptake ◽  
Water Saturation ◽  
Low Dielectric Constant ◽  
Aliphatic Chain ◽  
Bismaleimide Resin ◽  
Low Dielectric

ABSTRACTThe bismaleimide resin Matrimid 5292A (I) was cocured with an allylnadic-imide resin (EP 433) which contained a long aliphatic chain as backbone (II). Water uptake, swelling, and the dielectric properties (up to 300 MHz) were studied in cast plates. The dielectric constant varied from 5.4 in (I) to 3.2 in (II) at water saturation, compared to 3.1 in (I) to 2.7 in (II) in the dry state. The glass transition temperature stayed above 200 °C at less than 80 mol% of (II).

scholarly journals Low-dielectric-constant polyimide aerogel composite films with low water uptake

2016 ◽  
Vol 48 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Jinyoung Kim ◽  
Jinuk Kwon ◽  
Myeongsoo Kim ◽  
Jeonguk Do ◽  
Daero Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Aerogel Composite

A New Four-Arm Organosiloxane with Thermopolymerizable Trifluorovinyl ether Groups: Synthesis and Conversion to the Polymer with both Low Dielectric Constant and Low Water Uptake

2017 ◽  
Vol 218 (13) ◽  
pp. 1700010 ◽  
Author(s):  
Yumeng Xin ◽  
Jiajia Wang ◽  
Kaikai Jin ◽  
Yijie Luo ◽  
Junfeng Zhou ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Trifluorovinyl Ether

Conversion of a Biorenewable Plant Oil (Anethole) to a New Fluoropolymer with Both Low Dielectric Constant and Low Water Uptake

2016 ◽  
Vol 4 (8) ◽  
pp. 4451-4456 ◽  
Author(s):  
Fengkai He ◽  
Yu Gao ◽  
Kaikai Jin ◽  
Jiajia Wang ◽  
Jing Sun ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Low Dielectric Constant ◽  
Plant Oil ◽  
Low Dielectric

Probing capped and uncapped mesoporous low-dielectric constant films using positron annihilation lifetime spectroscopy

2000 ◽  
Vol 77 (16) ◽  
pp. 2470-2472 ◽  
Author(s):  
Mihail P. Petkov ◽  
Marc H. Weber ◽  
Kelvin G. Lynn ◽  
Kenneth P. Rodbell
Keyword(s):  
Dielectric Constant ◽  
Positron Annihilation ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Low Dielectric Constant ◽  
Positron Annihilation Lifetime ◽  
Low Dielectric

Preparation and Characterization of Organic Soluble Polyimides with Low Dielectric Constant Containing Trifluoromethyl for Optoelectronic Application

2021 ◽  
pp. 110566
Author(s):  
Kaitai Hu ◽  
Qingqing Ye ◽  
Yingtao Fan ◽  
Junyi Nan ◽  
Fangyuan Chen ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Optoelectronic Application ◽  
Low Dielectric

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Sign in / Sign up

Export Citation Format

Share Document