Bismaleimide/Allylnadic-Imide Blends Yield Low Dielectric Constant And Low Water Uptake

1991 ◽  
Vol 227 ◽  
Author(s):  
J-PH Ansermet ◽  
A. Kramer

ABSTRACTThe bismaleimide resin Matrimid 5292A (I) was cocured with an allylnadic-imide resin (EP 433) which contained a long aliphatic chain as backbone (II). Water uptake, swelling, and the dielectric properties (up to 300 MHz) were studied in cast plates. The dielectric constant varied from 5.4 in (I) to 3.2 in (II) at water saturation, compared to 3.1 in (I) to 2.7 in (II) in the dry state. The glass transition temperature stayed above 200 °C at less than 80 mol% of (II).

2016 ◽  
Vol 29 (2) ◽  
pp. 141-150 ◽  
Author(s):  
K Ilango ◽  
P Prabunathan ◽  
E Satheeshkumar ◽  
P Manohar

In this present work, porous mullites (PM0–5) were synthesized through a template-assisted method using various weight percentages of pluronic (P-123). PM5 obtained using 10 wt% of P-123 was found to show maximum porosity (3.8 Å) and low dielectric constant value (2.4). PM5 was functionalized using glycidyl-terminated silane and denoted as FPM and various weight percentages of FPM were reinforced with polybenzoxazine (PBZ) matrix in order to develop FPM/PBZ nanocomposites. The thermal studies indicate that 1.5 wt% of FPM/PBZ nanocomposite showed improved thermal stability with 34% char yield at 800°C and 162°C as glass transition temperature. It also exhibits low dielectric constant (2.6) than that of the neat PBZ matrix and other FPM/PBZ nanocomposites. The microscopic analysis confirms the homogenous dispersion of FPM into the PBZ polymer that has a porous morphology. The results suggest that the as-synthesized mesoporous mullite with low dielectric constant ( k), synthesized via template-assisted method can be used as a reinforcement to decrease the dielectric constant of polymeric material, which is of industrial significance.


1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.


RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21662-21671 ◽  
Author(s):  
Weibing Dong ◽  
Yue Guan ◽  
Dejing Shang

To acquire low dielectric constant polyimide films with good mechanical and thermal properties and low CTE applied in microelectronic fields, three novel polyimides containing pyridine and –C(CF3)2– groups were firstly designed and synthesized.


2012 ◽  
Vol 512-515 ◽  
pp. 828-831 ◽  
Author(s):  
Wei Dong ◽  
Chang An Wang ◽  
Lei Yu ◽  
Shi Xi Ouyang

Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at 1750°C for 1.5 h in flow nitrogen. The influences of BN content on microstructure, porosity, mechanical and dielectric properties of the porous Si3N4/SiO2/BN composite ceramics were discussed. The results showed that the porous Si3N4/SiO2/BN composite ceramics with porosity ranging from 29% to 48% were fabricated by adjusting the content of BN. The flexural strength of the porous Si3N4/SiO2/BN composite ceramics was 78215 MPa. The dielectric constant of the porous Si3N4/SiO2/BN composite ceramics was 3.9~5 at 1 MHz.


2018 ◽  
Vol 219 (20) ◽  
pp. 1800252 ◽  
Author(s):  
Linxuan Fang ◽  
Junfeng Zhou ◽  
Jiajia Wang ◽  
Jing Sun ◽  
Qiang Fang

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.


1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.


2016 ◽  
Vol 48 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Jinyoung Kim ◽  
Jinuk Kwon ◽  
Myeongsoo Kim ◽  
Jeonguk Do ◽  
Daero Lee ◽  
...  

2008 ◽  
Vol 368-372 ◽  
pp. 412-413 ◽  
Author(s):  
Jie Zhang ◽  
Deng Xue Wu ◽  
Xiang Hui Chang ◽  
Tie Cheng Lu ◽  
Yi Hang Jiang ◽  
...  

Dielectric constant and dielectric dissipation of MgAl2O4 transparent nano-ceramics were measured at different frequencies. The results indicated that the transparent nano-ceramic has a very low dielectric constant and low dielectric dissipation in frequency range of 1K~9MHz, but the dissipation of is independent of frequency. The dielectric constant of the transparent nano-ceramic does not vary signifycantly with temperature.


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