Comparative Study between Wet and Dry Etching of Poly(N-vinylcarbazole)

2006 ◽  
Vol 245-246 (1) ◽  
pp. 430-434
Author(s):  
Taís Moreira ◽  
Shirley Possidonio ◽  
S. Hui Wang ◽  
Roberto K. Onmori
Keyword(s):  
Comparative Study ◽  
Dry Etching

A Model-Based Comparative Study of HCl and HBr Plasma Chemistries for Dry Etching Purposes

2015 ◽  
Vol 35 (6) ◽  
pp. 1129-1142 ◽  
Author(s):  
Alexander Efremov ◽  
Joon Hyub Kim ◽  
Kwang-Ho Kwon
Keyword(s):  
Comparative Study ◽  
Dry Etching ◽  
Model Based ◽  
Hbr Plasma

Comparative study on dry etching of polycrystalline diamond thin films

Vacuum ◽  
2012 ◽  
Vol 86 (6) ◽  
pp. 799-802 ◽  
Author(s):  
Tibor Izak ◽  
Alexander Kromka ◽  
Oleg Babchenko ◽  
Martin Ledinsky ◽  
Karel Hruska ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Polycrystalline Diamond ◽  
Dry Etching ◽  
Diamond Thin Films

A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications

2015 ◽  
Vol 579 ◽  
pp. 136-143 ◽  
Author(s):  
Inwoo Chun ◽  
Alexander Efremov ◽  
Geun Young Yeom ◽  
Kwang-Ho Kwon
Keyword(s):  
Comparative Study ◽  
Dry Etching

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

2013 ◽  
Vol 740-742 ◽  
pp. 817-820
Author(s):  
J.H. Choi ◽  
Laurence Latu-Romain ◽  
Edwige Bano ◽  
Anne Henry ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Comparative Study ◽  
Cross Section ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Crystal Orientations ◽  
Comprehensive Study

A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.

scholarly journals Comparative study on dry etching of α- and β-SiC nano-pillars

2012 ◽  
Vol 87 ◽  
pp. 9-12 ◽  
Author(s):  
J.H. Choi ◽  
L. Latu-Romain ◽  
E. Bano ◽  
A. Henry ◽  
W.J. Lee ◽  
...  
Keyword(s):  
Comparative Study ◽  
Dry Etching

Comparative study of CF4- and CHF3-based plasmas for dry etching applications

2016 ◽  
Author(s):  
A. Efremov ◽  
K.-H. Kwon ◽  
A. Morgunov ◽  
D. Shabadarova
Keyword(s):  
Comparative Study ◽  
Dry Etching
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