Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

2005 ◽  
Author(s):  
Y.X. Liu ◽  
B. Sugimata ◽  
M. Masahara ◽  
K. Ishii ◽  
K. Endo ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
Dry Etching ◽  
Effective Electron ◽  
Channel Surface

scholarly journals Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125231
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Comparative Study between Wet and Dry Etching of Poly(N-vinylcarbazole)

2006 ◽  
Vol 245-246 (1) ◽  
pp. 430-434
Author(s):  
Taís Moreira ◽  
Shirley Possidonio ◽  
S. Hui Wang ◽  
Roberto K. Onmori
Keyword(s):  
Comparative Study ◽  
Dry Etching

Empirical Model for the Effective Electron Mobility in Silicon Nanowires

2014 ◽  
Vol 61 (11) ◽  
pp. 3601-3607 ◽  
Author(s):  
Ralf Granzner ◽  
Vladimir M. Polyakov ◽  
Christian Schippel ◽  
Frank Schwierz
Keyword(s):  
Empirical Model ◽  
Silicon Nanowires ◽  
Electron Mobility ◽  
Effective Electron

Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4521-4522 ◽  
Author(s):  
Masahiko Hiratani ◽  
Shin-ich Saito ◽  
Yasuhiro Shimamoto ◽  
Kazuyoshi Torii
Keyword(s):  
Electron Mobility ◽  
Gate Stacks ◽  
Effective Electron
Sign in / Sign up

Export Citation Format

Share Document