Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 Ga 0 . 9 N / GaN /Al 0. 04 Ga 0 . 96 N high electron mobility transistors for RF applications

2021 ◽  
Author(s):  
Revathy A. ◽  
Boopathi C. S.
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
Electron Mobility Transistors ◽  
Rf Applications

Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

2004 ◽  
Author(s):  
Ashok K. Sood ◽  
Elwood J. Egerton ◽  
Yash R. Puri ◽  
Frederick W. Clarke, Jr. ◽  
James C. Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Rf Applications
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