Channel noise in InGaAs/InP composite channel high electron mobility transistors (HEMTs)

2008 20th International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2008.4702957 ◽

2008 ◽

Author(s):

Hong Wang ◽

Yuwei Liu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Channel Noise ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)

10.7567/ssdm.2005.i-7-2 ◽

2005 ◽

Author(s):

Yuwei Liu ◽

Hong Wang ◽

Rong Zeng

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Microwave Noise

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High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Applied Physics Letters ◽

10.1063/1.5102080 ◽

2019 ◽

Vol 115 (7) ◽

pp. 072105 ◽

Author(s):

Yachao Zhang ◽

Rui Guo ◽

Shengrui Xu ◽

Jincheng Zhang ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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Study of Ohmic contact resistance to Ga[sub (1−X)]In[sub (X)]As/InP composite channel InP high electron mobility transistors for X=35% to X=81%

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589523 ◽

1997 ◽

Vol 15 (5) ◽

pp. 1773 ◽

Author(s):

J. B. Shealy

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2828 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2828-2832 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

Applied Physics Letters ◽

10.1063/1.2780113 ◽

2007 ◽

Vol 91 (10) ◽

pp. 102110 ◽

Author(s):

T.-W. Kim ◽

J.-I. Song ◽

J. H. Jang ◽

D.-H. Kim ◽

S. D. Park ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Atomic Layer Etching ◽

Inas Composite Channel

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A comparative study on radiation reliability of composite channel InP high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/abe2fd ◽

2021 ◽

Author(s):

Jia-Jia Zhang ◽

Ping Ding ◽

Ya-Nan Jin ◽

Sheng-Hao Meng ◽

Xiang-Qian Zhao ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

10.7567/ssdm.2007.g-3-2 ◽

2007 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91, 3318 (2002)]

Journal of Applied Physics ◽

10.1063/1.1505688 ◽

2002 ◽

Vol 92 (8) ◽

pp. 4840-4841

Author(s):

M. A. Py ◽

H.-J. Buehlmann

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Channel Noise ◽

High Electron ◽

Frequency Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 Ga 0 . 9 N / GaN /Al 0. 04 Ga 0 . 96 N high electron mobility transistors for RF applications

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22775 ◽

2021 ◽

Author(s):

Revathy A. ◽

Boopathi C. S.

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Rf Applications

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Sub-30-nm In₀.8Ga₀.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3045958 ◽

2021 ◽

pp. 1-7

Author(s):

Hyeon-Bhin Jo ◽

Seung-Won Yun ◽

Jun-Gyu Kim ◽

Ji-Min Baek ◽

In-Geun Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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