RF performance assessment of AlGaN/GaN MISHFET at high temperatures for improved power and pinch-off characteristics

2009 ◽  
Vol 51 (8) ◽  
pp. 1942-1949 ◽  
Author(s):  
Ruchika Aggarwal ◽  
Anju Agrawal ◽  
Mridula Gupta ◽  
R. S. Gupta
Author(s):  
Jean-Charles Barbe ◽  
Luca Lucci ◽  
Alexandre Siligaris ◽  
Pierre Vincent ◽  
Olivier Faynot

2012 ◽  
Vol E95.C (8) ◽  
pp. 1332-1336 ◽  
Author(s):  
Maiko HATANO ◽  
Norimasa YAFUNE ◽  
Hirokuni TOKUDA ◽  
Yoshiyuki YAMAMOTO ◽  
Shin HASHIMOTO ◽  
...  

Author(s):  
Z. L. Wang ◽  
J. Bentley

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.


1983 ◽  
Author(s):  
Robert J. Jones ◽  
Eduardo Salas ◽  
Elizabeth W. Pitts ◽  
Gary L. Allen ◽  
Ben B. Morgan

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