Low temperature UV laser etching of PMMA: On the mechanism of ablative photodecomposition (APD)

1986 ◽  
Vol 24 (8) ◽  
pp. 371-376 ◽  
Author(s):  
B. Braren ◽  
D. Seeger
Keyword(s):  
Low Temperature ◽  
Uv Laser ◽  
Laser Etching

Limiting Steps at Low Temperature in Direct Writing of Al on Si From Tma

1987 ◽  
Vol 101 ◽  
Author(s):  
J. Flicstein ◽  
J.E. Bouree ◽  
J.F. Bresse ◽  
A.M. Pougnet
Keyword(s):  
Low Temperature ◽  
Deposition Rate ◽  
Laser Power ◽  
Normal Direction ◽  
Direct Writing ◽  
Uv Laser ◽  
Methyl Radical ◽  
Carbon Contamination ◽  
Hydrogen Mixture ◽  
Trimethyl Aluminum

ABSTRACTThe rates of aluminum line growth, assisted by photolysis, in the normal direction to the Si (100) substrate, indicate that, in a trimethyl-aluminum + hydrogen mixture, only the change in the TMA flux and the UV laser power can play a determinant role. Possible explanation is based on the generated methyl radical “blocking” action leading to a self-limiting deposition rate, as opposed to the enhancement of methyl desorption by hydrogenation to methane. It is shown that dilution by hydrogen decreases the carbon contamination in aluminum line.

scholarly journals Pulsed UV Laser and Low Temperature Plasma Modification on Polyester Microfibre

2000 ◽  
Vol 46 (2) ◽  
pp. 32-41 ◽  
Author(s):  
Wilson Wong ◽  
Kwong Chan ◽  
Kwok Wing Yeung ◽  
Kai Shui Lau
Keyword(s):  
Low Temperature ◽  
Plasma Modification ◽  
Low Temperature Plasma ◽  
Uv Laser ◽  
Temperature Plasma

Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

1993 ◽  
pp. 164-168
Author(s):  
J. Simpson ◽  
I. Hauksson ◽  
S.Y. Wang ◽  
H. Stewart ◽  
K.A. Prior ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Uv Laser ◽  
Mbe Growth ◽  
P Type

Photochemical Processes in Photo-Assisted Epitaxy of CdxHg 1-xTe

1986 ◽  
Vol 90 ◽  
Author(s):  
S J C Irvine ◽  
J B Mullin ◽  
G W Blackmore ◽  
O D Dosser ◽  
H Hill
Keyword(s):  
Free Radical ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapour Phase ◽  
Laser Source ◽  
Methyl Radicals ◽  
Uv Laser ◽  
Surface Nucleation ◽  
Radical Concentration ◽  
Radical Model

ABSTRACTMechanisms for the low temperature photo-dissociation of alkyl precursors for the epitaxial growth of CdxHg1-xTe (CMT) are discussed. The roles of vapour and surface nucleation are considered in the light of the free radical model which also can provide methods for controlling the vapour phase photochemistry. Higher quality CMT has been grown at 250 °C by using dimethyl mercury as a source of free methyl radicals. Problems encountered in reducing growth temperature for multilayer epitaxy are considered for CdTe and HgTe and conditions established for epitaxial growth at 200°C.The roles of alkyl concentration, substrate temperature, UV intensity and free radical concentration are explored. Results on the first reported growth of CdTe deposition using a cw UV laser source are compared with the arc lamp grown layers.

Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

1993 ◽  
Vol 185 (1-4) ◽  
pp. 164-168 ◽  
Author(s):  
J. Simpson ◽  
I. Hauksson ◽  
S.Y. Wang ◽  
H. Stewart ◽  
K.A. Prior ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Uv Laser ◽  
Mbe Growth ◽  
P Type

Deep UV laser etching of GaN epilayers grown on sapphire substrate

2012 ◽  
Vol 212 (2) ◽  
pp. 492-496 ◽  
Author(s):  
Yu-Tang Dai ◽  
Gang Xu ◽  
Xin-Lin Tong
Keyword(s):  
Sapphire Substrate ◽  
Uv Laser ◽  
Laser Etching ◽  
Deep Uv

Fluorine Atom Production Mechanisms From COF2 and NF3 in Uv Laser Etching of Poly-Silicon and Molybdenum

1986 ◽  
Vol 75 ◽  
Author(s):  
Gary L. Loper ◽  
Martin D. Tabat
Keyword(s):  
Production Process ◽  
Gas Phase ◽  
Fluorine Atom ◽  
Charge Carriers ◽  
Uv Laser ◽  
Mechanistic Studies ◽  
Laser Etching ◽  
Microelectronic Devices ◽  
Film Layer ◽  
Production Mechanisms

AbstractUltraviolet laser-induced, radical-etching processes developed by us can provide practical etch rates and selectivities for most of the important film layer combinations used in silicon microelectronic devices. These processes have been demonstrated in simple proximity and projection exposure experiments to produce etch features on surfaces with dimensions of a few tenths of a micrometer.Mechanistic studies suggest that, in our etching processes for polysilicon and molybdenum, fluorine atoms responsible for etching are primarily produced from the precursors COF2 and NF3 on the surface rather than in the gas phase. The predominant production process appears to be photodecomposition of surface adsorbed precursor. Contributions due to precursor pyrolysis or precursor reaction with photogenerated charge carriers are found to be unimportant.

Complete Fabrication of Bipolar Devices in Silicon

1983 ◽  
Vol 29 ◽  
Author(s):  
M. L. Lloyd ◽  
K. G. Ibbs
Keyword(s):  
Low Temperature ◽  
Contact Resistance ◽  
High Intensity ◽  
Dopant Concentration ◽  
Laser Deposition ◽  
Uv Laser ◽  
Junction Depth ◽  
Bipolar Devices ◽  
Direct Fabrication ◽  
Control Of Parameters

ABSTRACTUV laser photochemical doping offers the possibility of direct fabrication of semiconductor devices by high-intensity photolithographic projection. We have recently demonstrated control of parameters such as dopant concentration and junction depth to the extent that npn structures can be readily produced.Recent work also indicates that contact resistance can be dramatically reduced from the levels found using simple probes, by the low-temperature laser deposition of metals, and that this technique also can be used to connect elements in a circuit.In this paper the progress made towards the fabrication of complete planar devices is described and the I-V characteristics of some simple diodes are shown.

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