Poly(3-hexylselenophene) solar cells: Correlating the optoelectronic device performance and nanomorphology imaged by low-energy scanning Transmission electron microscopy

2011 ◽  
Vol 50 (3) ◽  
pp. 198-206 ◽  
Author(s):  
Michael F. G. Klein ◽  
Marina Pfaff ◽  
Erich Müller ◽  
Jens Czolk ◽  
Manuel Reinhard ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Optoelectronic Device ◽  
Low Energy ◽  
Device Performance ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Nanomorphology of P3HT:PCBM-based Organic Solar Cells Analyzed by Low-Energy Scanning Transmission Electron Microscopy

2012 ◽  
Vol 18 (S2) ◽  
pp. 1234-1235 ◽  
Author(s):  
M. Pfaff ◽  
E. Müller ◽  
P. Müller ◽  
D. Gerthsen ◽  
M.G. Klein ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Low Energy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Nanomorphology of P3HT:PCBM-Based Absorber Layers of Organic Solar Cells after Different Processing Conditions Analyzed by Low-Energy Scanning Transmission Electron Microscopy

2012 ◽  
Vol 18 (6) ◽  
pp. 1380-1388 ◽  
Author(s):  
Marina Pfaff ◽  
Michael F.G. Klein ◽  
Erich Müller ◽  
Philipp Müller ◽  
Alexander Colsmann ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Weight ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Low Energy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractIn this study the nanomorphology of P3HT:PC61BM absorber layers of organic solar cells was studied as a function of the processing parameters and for P3HT with different molecular weight. For this purpose we apply scanning transmission electron microscopy (STEM) at low electron energies in a scanning electron microscope. This method exhibits sensitive material contrast in the high-angle annular dark-field (HAADF) mode, which is well suited to distinguish materials with similar densities and mean atomic numbers. The images taken with low-energy HAADF STEM are compared with conventional transmission electron microscopy and atomic force microscopy images to illustrate the capabilities of the different techniques. For the interpretation of the low-energy HAADF STEM images, a semiempirical equation is used to calculate the image intensities. The experiments show that the nanomorphology of the P3HT:PC61BM blends depends strongly on the molecular weight of the P3HT. Low-molecular-weight P3HT forms rod-like domains during annealing. In contrast, only small globular features are visible in samples containing high-molecular-weight P3HT, which do not change significantly after annealing at 150°C up to 30 min.

scholarly journals Study of Effects of Cl and Se in CdSeTe Solar Cells Using Scanning Transmission Electron Microscopy

2019 ◽  
Vol 25 (S2) ◽  
pp. 2150-2151 ◽  
Author(s):  
Jinglong Guo ◽  
Fatih G. Sen ◽  
Arun Mannodi-Kannakithodi ◽  
Edward S. Barnard ◽  
W. Sampath ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

scholarly journals Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

2018 ◽  
Vol 5 (3) ◽  
Author(s):  
Patricia Carvalho ◽  
Annett Thørgesen ◽  
Quanbao Ma ◽  
Daniel Nielsen Wright ◽  
Spyros Diplas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
High Concentration ◽  
Intermediate Band ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations of \mathbf{10^{19}\:\mathrm{\mathbf{at.cm}}^{-3}}1019𝐚𝐭.𝐜𝐦−3 were achieved at 1873 K.

Sign in / Sign up

Export Citation Format

Share Document