Low-energy electron scattering in carbon-based materials analyzed by scanning transmission electron microscopy and its application to sample thickness determination

2010 ◽  
Vol 243 (1) ◽  
pp. 31-39 ◽  
Author(s):  
M. PFAFF ◽  
E. MÜLLER ◽  
M. F. G. KLEIN ◽  
A. COLSMANN ◽  
U. LEMMER ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Scattering ◽  
Scanning Transmission Electron Microscopy ◽  
Sample Thickness ◽  
Low Energy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Low Energy Electron

Nanomorphology of P3HT:PCBM-based Organic Solar Cells Analyzed by Low-Energy Scanning Transmission Electron Microscopy

2012 ◽  
Vol 18 (S2) ◽  
pp. 1234-1235 ◽  
Author(s):  
M. Pfaff ◽  
E. Müller ◽  
P. Müller ◽  
D. Gerthsen ◽  
M.G. Klein ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Scanning Transmission Electron Microscopy ◽  
Low Energy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Sample Thickness Determination by Scanning Transmission Electron Microscopy at Low Electron Energies

2013 ◽  
Vol 20 (1) ◽  
pp. 111-123 ◽  
Author(s):  
Tobias Volkenandt ◽  
Erich Müller ◽  
Dagmar Gerthsen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Primary Electron ◽  
Sample Thickness ◽  
Simulated Image ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Wide Range ◽  
Scanning Transmission

AbstractSample thickness is a decisive parameter for any quantification of image information and composition in transmission electron microscopy. In this context, we present a method to determine the local sample thickness by scanning transmission electron microscopy at primary energies below 30 keV. The image intensity is measured with respect to the intensity of the incident electron beam and can be directly compared with Monte Carlo simulations. Screened Rutherford and Mott scattering cross-sections are evaluated with respect to fitting experimental data with simulated image intensities as a function of the atomic number of the sample material and primary electron energy. The presented method is tested for sample materials covering a wide range of atomic numbers Z, that is, fluorenyl hexa-peri-hexabenzocoronene (Z = 3.5), carbon (Z = 6), silicon (Z = 14), gallium nitride (Z = 19), and tungsten (Z = 74). Investigations were conducted for two primary energies (15 and 30 keV) and a sample thickness range between 50 and 400 nm.

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