Effects of post-annealing on (110) Cu2 O epitaxial films and origin of low mobility in Cu2 O thin-film transistor

2009 ◽  
Vol 206 (9) ◽  
pp. 2192-2197 ◽  
Author(s):  
Kosuke Matsuzaki ◽  
Kenji Nomura ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
2015 ◽  
Vol 748 ◽  
pp. 141-145
Author(s):  
Li Juan Liang ◽  
Yukimoto Tomoyashi ◽  
Xian Fu Wei

A nonvolatile memory based on an organic thin-film transistor (OTFT) with biopolymer of DNA-OTMA as the gate dielectric is fabricated. The device prepared by DNA-OTMA show a very large and metastable hysteresis in the transfer characteristics. In order to obtain the organic thin film transistor memory device with high electronic performance, one of the most widely used method such as post annealing have been applied to improve the quality of gate dielectric layer. In conclusion, the post-annealing at elevated temperatures plays a very important role in the performance of the OTFT memory device.


Author(s):  
Tiantian Pi ◽  
Dongqi Xiao ◽  
Hui Yang ◽  
Xiaohan Wu ◽  
Wenjun Liu ◽  
...  

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  

2014 ◽  
Vol 35 (20) ◽  
pp. 1770-1775 ◽  
Author(s):  
Stefanie Schmid ◽  
Anne K. Kast ◽  
Rasmus R. Schröder ◽  
Uwe H. F. Bunz ◽  
Christian Melzer

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