scholarly journals Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017)

2017 ◽  
Vol 214 (8) ◽  
pp. 1770150
Author(s):  
Atsushi Tanaka ◽  
Ousmane Barry ◽  
Kentaro Nagamatsu ◽  
Junya Matsushita ◽  
Manato Deki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Carrier Concentration ◽  
Leakage Current ◽  
Schottky Barrier Diode

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

2017 ◽  
Vol 214 (8) ◽  
pp. 1600829 ◽  
Author(s):  
Atsushi Tanaka ◽  
Ousmane Barry ◽  
Kentaro Nagamatsu ◽  
Junya Matsushita ◽  
Manato Deki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Carrier Concentration ◽  
Leakage Current ◽  
Schottky Barrier Diode

Low leakage current Schottky barrier diode

2005 ◽  
Author(s):  
H. Kozaka ◽  
M. Takata ◽  
S. Murakami ◽  
T. Yatsuo
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

Leakage current in Ti/4H-SiC Schottky barrier diode

2006 ◽  
Vol 376-377 ◽  
pp. 370-373 ◽  
Author(s):  
K. Ohtsuka ◽  
Y. Matsuno ◽  
K. Kuroda ◽  
H. Sugimoto ◽  
Y. Tarui ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode

Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode

2012 ◽  
Vol 73 ◽  
pp. 1-6 ◽  
Author(s):  
Min-Woo Ha ◽  
Jun Ho Lee ◽  
Min-Koo Han ◽  
Cheol-Koo Hahn
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
High Voltage ◽  
Schottky Barrier Diode

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

2003 ◽  
Vol 433-436 ◽  
pp. 831-834 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuhiro Kushibe ◽  
Takatoshi Watanabe ◽  
Seiji Imai ◽  
Takashi Shinohe
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Optimum Design ◽  
Schottky Barrier Diode ◽  
Tunneling Process ◽  
Reverse Leakage Current

Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation

2006 ◽  
Vol 45 (4B) ◽  
pp. 3398-3400 ◽  
Author(s):  
Seung-Chul Lee ◽  
Min-Woo Ha ◽  
Ji-Yong Lim ◽  
Jin-Cherl Her ◽  
Kwang-Seok Seo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Gan Heterostructure

Defect Related Leakage Current Components in SiC Schottky Barrier Diode

2012 ◽  
Vol 725 ◽  
pp. 53-56 ◽  
Author(s):  
Kenichi Ohtsuka ◽  
T. Nakatani ◽  
A. Nagae ◽  
H. Watanabe ◽  
Y. Nakaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Device Simulation ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Current Component ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Drift Layer ◽  
Lower Voltage

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.

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