Low leakage current Schottky barrier diode

2005 ◽  
Author(s):  
H. Kozaka ◽  
M. Takata ◽  
S. Murakami ◽  
T. Yatsuo
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current

Defect Related Leakage Current Components in SiC Schottky Barrier Diode

2012 ◽  
Vol 725 ◽  
pp. 53-56 ◽  
Author(s):  
Kenichi Ohtsuka ◽  
T. Nakatani ◽  
A. Nagae ◽  
H. Watanabe ◽  
Y. Nakaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Device Simulation ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Current Component ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Drift Layer ◽  
Lower Voltage

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.

Low leakage current circular AlGaN/GaN Schottky barrier diode

2008 ◽  
Author(s):  
Jiyong Lim ◽  
Young-Hwan Choi ◽  
Sun-Jae Kim ◽  
Kyu-Heon Cho ◽  
Young-Shil Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current

Low leakage current AlGaN/GaN on Si-based Schottky barrier diode with bonding-pad electrode mesa etching

2015 ◽  
Vol 54 (7) ◽  
pp. 070302 ◽  
Author(s):  
Hyun-Gyu Jang ◽  
Jeho Na ◽  
Jung-Jin Kim ◽  
Young-Rak Park ◽  
Hyun-Soo Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan On Si

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

2018 ◽  
Vol 113 (20) ◽  
pp. 202101 ◽  
Author(s):  
Wenshen Li ◽  
Zongyang Hu ◽  
Kazuki Nomoto ◽  
Zexuan Zhang ◽  
Jui-Yuan Hsu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Low Leakage ◽  
Low Leakage Current
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