Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

2003 ◽  
Vol 433-436 ◽  
pp. 831-834 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuhiro Kushibe ◽  
Takatoshi Watanabe ◽  
Seiji Imai ◽  
Takashi Shinohe
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Optimum Design ◽  
Schottky Barrier Diode ◽  
Tunneling Process ◽  
Reverse Leakage Current

scholarly journals Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure

2019 ◽  
Vol 13 ◽  
pp. 102250 ◽  
Author(s):  
Dan Zhao ◽  
Zhangcheng Liu ◽  
Juan Wang ◽  
Wenyang Yi ◽  
Ruozheng Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Reverse Leakage Current

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

scholarly journals Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

2012 ◽  
Vol 100 (13) ◽  
pp. 132104 ◽  
Author(s):  
Woo Jin Ha ◽  
Sameer Chhajed ◽  
Seung Jae Oh ◽  
Sunyong Hwang ◽  
Jong Kyu Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Reverse Leakage Current

Low leakage current Schottky barrier diode

2005 ◽  
Author(s):  
H. Kozaka ◽  
M. Takata ◽  
S. Murakami ◽  
T. Yatsuo
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

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