Effect of germanium‐codoping on the grown‐in oxide precipitates in nitrogen‐doped Czochralski silicon

2021 ◽  
Author(s):  
Wu Lan ◽  
Tong Zhao ◽  
Defan Wu ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

2003 ◽  
Vol 66 (1-4) ◽  
pp. 305-313 ◽  
Author(s):  
G.A. Rozgonyi ◽  
A. Karoui ◽  
A. Kvit ◽  
G. Duscher
Keyword(s):  
Scale Analysis ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Nano Scale

Copper precipitation in nitrogen-doped Czochralski silicon

2008 ◽  
Vol 104 (1) ◽  
pp. 013508 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Copper Precipitation

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

2003 ◽  
Vol 95-96 ◽  
pp. 111-116 ◽  
Author(s):  
De Ren Yang ◽  
Hong Jie Wang ◽  
Xuegong Yu ◽  
Xiang Yang Ma ◽  
Duan Lin Que
Keyword(s):  
Thermal Stability ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitates ◽  
Thermal Stability Of

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

2004 ◽  
Vol 21 (11) ◽  
pp. 2242-2244 ◽  
Author(s):  
Li Dong-Sheng ◽  
Yang De-Ren ◽  
E Leoni ◽  
S Binetti ◽  
S Pizzini
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

2012 ◽  
Vol 725 ◽  
pp. 221-226
Author(s):  
Gudrun Kissinger ◽  
Georg Raming ◽  
Reinhold Wahlich ◽  
Timo Müller
Keyword(s):  
Wafer Surface ◽  
Diffusion Annealing ◽  
Interstitial Oxygen ◽  
Diffusion Anneal ◽  
Gate Oxides ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Co Doping ◽  
Defect Zone ◽  
Co Doped

An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The CZ silicon material used was optimized with respect to voids and contained a central OSF region and an outer Pv region. Due to co-doping of at least 3×1013cm-3nitrogen, a laterally homogeneous bulk microdefect density was obtained which is independent of the temperature of the out-diffusion anneal. The internal getter created in this way efficiently getters nickel impurities as demonstrated in a getter test with 6.6×1011cm-3of intentional Ni contamination. In the central OSF region of the as-grown nitrogen co-doped wafers, the nuclei capable of generating OSFs also degrade the gate oxide integrity. Out-diffusion annealing at 1075-1100°C dissolves most of the defects capable of generating OSFs and it strongly improves the integrity of 5 nm gate oxides.

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