scholarly journals Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

2004 ◽  
Vol 53 (2) ◽  
pp. 550
Author(s):  
Xu Jin ◽  
Yang De-Ren ◽  
Chu Jia ◽  
Ma Xiang-Yang ◽  
Que Duan-Lin
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Stacking Faults ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Transmission Electron

A Hvem Study of the Electron Irradiated Defects in Nitrogen Doped FZ-Si Single Crystal

1989 ◽  
Vol 163 ◽  
Author(s):  
Gao Yuzun ◽  
T. Takeyama
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Defect Density ◽  
Migration Energy ◽  
Nitrogen Doped ◽  
Temperature Range ◽  
Transmission Electron ◽  
Excellent Property ◽  
P Type

AbstractHigh voltage transmission electron microscope (JEM-1000) has been used to investigate the electron irradiated defects in in p-type FZ-Si and nitrogen doped p-type FZ-Si. It was found that when the irradiated conditions were the saie ,the irradiated defects were easier to be produced in the FZ-Si than in nitrogen doped FZ-Si in the temperature range 573-773 K. The defect density was higher in the foraer. The migration energy of the vacancies in the temperature range 573-773 K was 0.34 and 0.58 eV for FZ-Si and nitrogen doped FZ-Si respectively. It seems to indicate that there was some interaction between vacancies and nitrogen atoms in the nitrogen doped FZ-Si. The results proved that the nitrogen doped FZ-Si has excellent property against electron irradiation.

Observations of Defect Generation at Stacking Faults in Boron Diffused and Oxidized Silicon Films

1973 ◽  
Vol 31 ◽  
pp. 128-129 ◽  
Author(s):  
A. G. Cullis ◽  
D. M. Maher ◽  
C. M. Hsieh
Keyword(s):  
Electron Microscope ◽  
Oxide Layer ◽  
Silicon Wafer ◽  
Transmission Electron Microscope ◽  
Defect Formation ◽  
Stacking Faults ◽  
Epitaxial Silicon ◽  
Partial Dislocations ◽  
Substrate Side ◽  
Transmission Electron

Recently, the transmission electron microscope (TEM) has been used to study the formation and geometry of defect colonies in annealed and quenched silicon and in thermally oxidized and boron diffused silicon. The purpose of the present study was to examine subsidiary defect formation which can occur during the climb of Frank partial dislocations bounding stacking faults in boron diffused and subsequently thermally oxidized silicon. In these experiments, a {001} epitaxial silicon wafer (n-type, 1Ω−cm) was boron diffused (to 5×1018/cm3), and then steam oxidized for 2 hr at 1050°C. Prior to oxidation the wafer was cleaned using HF as a last step. After oxidation the oxide layer was first removed and then specimens from the wafer were chemically thinned from the substrate side for TEM observations (200 kV).

Stacking Fault Substructure of Martensite in Steel

2011 ◽  
Vol 121-126 ◽  
pp. 3493-3497
Author(s):  
Yun Ping Ji ◽  
Zong Chang Liu ◽  
Hui Ping Ren
Keyword(s):  
Electron Microscope ◽  
Crystal Lattice ◽  
Formation Mechanism ◽  
Transmission Electron Microscope ◽  
Stacking Faults ◽  
Stacking Fault ◽  
High Density ◽  
Shear Mechanism ◽  
Transmission Electron

The stacking fault substructure was observed in the quenched martensite of 35CrMo, 2Cr13 and W6Mo5Cr4V2 steels by JEM-2100 transmission electron microscope. It is significant theoretically to discovery the stacking fault substructure and then to study its formation mechanism. The results show that the stacking faults in the martensite of steels are superfine with a few nanometers spacings, which are often concomitant with the high-density dislocations. It is considered that the stacking fault results from the crystal lattice misarrangement during the crystal lattice reconstruction from austenite to martensite in steels. The shear mechanism cannot explain the formation of the stacking fault.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

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