Application of Copper Thermal Spraying for Electrical Joints between Superconducting Nb3Sn Cables

This manuscript reports on the application of copper thermal spraying in the manufacturing process of an electrical connection between Nb3Sn cables for superconducting magnets of fusion reactors. The joint is realized through diffusion bonding of the sprayed coating of the two cables. The main requirement for such a connection is its electrical resistance, which must be below 1 nΩ at B = 8 T, I = 63.3 kA and T = 4.5 K. Micrographs of the joint prototype were taken to relate the joint resistance with its microstructure and to provide feedback on the manufacturing process. Optical microscopy (OM) was used to evaluate the grain size of the coating, presence of oxide phases and to analyze the jointed surfaces. Scanning electron microscopy (SEM) and, in particular, energy-dispersive X-ray spectroscopy (EDX) were used to confirm the elemental composition of specimens extracted from the prototype. It is shown that the copper coating has an oxide concentration of 40%. Despite this, the resistance of the prototype is 0.48 nΩ in operating conditions, as the oxides are in globular form. The contact ratio between the jointed surfaces is about 95%. In addition, residual resistivity ratio (RRR) measurements were carried out to quantify the electrical quality of the Cu coating.

High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$$_3$$ on SrTiO$$_3$$ (001)

The growth of SrRuO$$_3$$ 3 (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO$$_2$$ 2 -terminated SrTiO$$_3$$ 3 (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 $$\times $$ × 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to $$t \approx $$ t ≈ 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02 ± 1) reflections, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle ($$\alpha $$ α ), and miscut direction ($$\beta $$ β ), giving a volume fraction of about 92 $$\%$$ % for $$t \approx $$ t ≈ 26.6 nm and $$(\alpha , \beta ) \approx $$ ( α , β ) ≈ (0.14$$^{\mathrm{o}}$$ o , 5$$^{\mathrm{o}}$$ o ). On the other hand, metallic and ferromagnetic properties were well preserved down to t$$\approx $$ ≈ 1.2 nm. Residual resistivity ratio (RRR = $$\rho ({\mathrm{300 K}})$$ ρ ( 300 K ) /$$\rho ({\mathrm{5K}})$$ ρ ( 5 K ) ) reduces from 77.1 for t$$\approx $$ ≈ 28.5 nm to 2.5 for t$$\approx $$ ≈ 1.2 nm, while $$\rho ({\mathrm{5K}})$$ ρ ( 5 K ) increases from 2.5 $$\upmu \Omega $$ μ Ω cm for t$$\approx $$ ≈ 28.5 nm to 131.0 $$\upmu \Omega $$ μ Ω cm for t$$\approx $$ ≈ 1.2 nm. The ferromagnetic onset temperature ($$T'_{\mathrm{c}}$$ T c ′ ) of around 151 K remains nearly unchanged down to t$$\approx $$ ≈ 9.0 nm and decreases to 90 K for t$$\approx $$ ≈ 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

Novel synthesis approach for “stubborn” metals and metal oxides

Advances in physical vapor deposition techniques have led to a myriad of quantum materials and technological breakthroughs, affecting all areas of nanoscience and nanotechnology which rely on the innovation in synthesis. Despite this, one area that remains challenging is the synthesis of atomically precise complex metal oxide thin films and heterostructures containing “stubborn” elements that are not only nontrivial to evaporate/sublimate but also hard to oxidize. Here, we report a simple yet atomically controlled synthesis approach that bridges this gap. Using platinum and ruthenium as examples, we show that both the low vapor pressure and the difficulty in oxidizing a “stubborn” element can be addressed by using a solid metal-organic compound with significantly higher vapor pressure and with the added benefits of being in a preoxidized state along with excellent thermal and air stability. We demonstrate the synthesis of high-quality single crystalline, epitaxial Pt, and RuO2 films, resulting in a record high residual resistivity ratio (=27) in Pt films and low residual resistivity, ∼6 μΩ·cm, in RuO2 films. We further demonstrate, using SrRuO3 as an example, the viability of this approach for more complex materials with the same ease and control that has been largely responsible for the success of the molecular beam epitaxy of III-V semiconductors. Our approach is a major step forward in the synthesis science of “stubborn” materials, which have been of significant interest to the materials science and the condensed matter physics community.

Hydrothermal Synthesis and Transport Properties of FeS1-xTex (0 ≤ x ≤ 0.15) Single Crystals

In this work, a series of FeS1-xTex (0 ≤ x ≤ 0.15) single crystals were successfully synthesized by a hydrothermal method for the first time. According to the measurement of in-plane resistivity, Hall effect, and magnetoresistance (MR), we find that the superconducting transition temperature Tc is rapidly suppressed with the increasing Te substitution, and finally the superconductivity disappears when x > 0.05. With the substitution of Te for S, the residual resistivity ρ0 increases while the residual resistivity ratio (RRR) decreases monotonously. Meanwhile, the MR of FeS1-xTex is also reduced by Te doping. All these results reveal that the Te substitution introduces more impurity scattering. In consequence, the non-linear field-dependent of Hall resistivity ρxy at low temperature region is suppressed and a linear behavior is restored upon Te doping. The negative Hall coefficients RH for all the FeS1-xTex samples suggest that the electron-type carrier dominates the electrical conduction. Moreover, the MR of FeS1-xTex obviously follows Kohler’s law, indicating the isotropic scattering rates in the Fermi surface.

Proximity effect in [Nb(1.5 nm)/Fe(x)]10/Nb(50 nm) superconductor/ferromagnet heterostructures

We have investigated the structural, magnetic and superconduction properties of [Nb(1.5 nm)/Fe(x)]10 superlattices deposited on a thick Nb(50 nm) layer. Our investigation showed that the Nb(50 nm) layer grows epitaxially at 800 °C on the Al2O3(1−102) substrate. Samples grown at this condition possess a high residual resistivity ratio of 15–20. By using neutron reflectometry we show that Fe/Nb superlattices with x < 4 nm form a depth-modulated FeNb alloy with concentration of iron varying between 60% and 90%. This alloy has weak ferromagnetic properties. The proximity of this weak ferromagnetic layer to a thick superconductor leads to an intermediate phase that is characterized by a suppressed but still finite resistance of structure in a temperature interval of about 1 K below the superconducting transition of thick Nb. By increasing the thickness of the Fe layer to x = 4 nm the intermediate phase disappears. We attribute the intermediate state to proximity induced non-homogeneous superconductivity in the structure.

Single-Crystal Growth and Small Anisotropy of the Lower Critical Field in Oxypnictides: NdFeAsO1 − xFx

High-quality single crystals of the unconventional superconductor NdFeAsO1 − xFx were grown. We developed a new optimized flux technique to overcome the difficulties in single-crystal growth and the sample quality limitations of NdFeAsO1 − xFx. The normal state of the F-doped samples exhibits simple metallic behavior upon cooling down from room temperature, followed by a sharp superconducting transition. The values of residual resistivity ratio (RRR) is 3.2, 6.4, and 10.3 for x = 0.1, 0.15, and 0.2, respectively. Both the large RRR and the narrow superconducting transition signpost the high quality of the crystals. We have examined the in- and out-of-plane lower critical fields, and the field at which vortices penetrate the sample of NdFeAsO1 − xFx (x = 0.1). The anisotropy ratio [γHc1 (0)] increased slightly with increasing temperature from 0.8 Tc to Tc. The temperature dependence of the first vortex penetration field was obtained under the static magnetic field, H, parallel to the c- and ab- axis, and pronounced changes in the Hc1(T) curvature were observed, which are attributed to the multi-band superconductivity.

Resistivity of Fe/Al Multilayered Thin Films from Low Temperature to Room Temperature

By using electron beam gun and thermal deposition techniques in the vacuum range 6 x10-5mbar. The pure materials of 99.99% purity of iron and aluminium multilayers films grown on glass substrates at 300K in the following viz. The resistance was measured using four probe method at UGC-DAE Consortium Indore (4.2K to 300K) later resistivity, conductivity, temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) , and activation energy(Ea) were calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value, resistivity is increased with increasing temperature. The data belonging to metallic region has been analyzed using the conventional power law’s and it is first time this set of films have explore resistivity at low temperature.

Mechanical, Thermal and Electrical Characteristics of Conventionally Cast and Cold-Rolled 5754-Sc-Zr Aluminium Alloy

The effect of cold-rolling on mechanical, thermal, and electrical properties as well as microstructure behaviour of the Al-2.93wt.%Mg-0.34wt.%Mn-0.33wt.%Si-0.22wt.%Fe-0.19wt.%Cr-0.24wt.%Sc-0.06wt.%Zr was studied. The material was investigated during step-by-step isochronal annealing in a temperature range from room temperature up to 540 °C and during isothermal annealing at 200, 450 and 550 °C. Precipitation reactions were studied by electrical resistometry, conductivity, (micro) hardness measurements and differential scanning calorimetry. The hardening effect appears due to the additional precipitation of the Al3Sc and/or Al3(Sc,Zr) particles. The distinct changes in residual resistivity ratio above ~ 330 °C are probably caused by precipitation of the Mn (,Fe,Cr)-containing particles. This precipitation process is highly influenced by cold rolling but it has a negligible effect on hardness. The apparent activation energy values for additional formation of the Al3Sc and/or Al3(Sc,Zr) particles were determined. The kinetics of the Al3(Sc,Zr)-phase precipitation seems to be independent of Mn-and Mg-addition in the studied alloys. A partial recrystallization of the cold-rolled alloy was registered by electron backscatter diffraction after annealing at 550 °C. The initial difference in microhardness introduced by cold rolling is almost removed after annealing at 550 °C/30 min.