Enhancement of the free carrier density in Ga1-xAlx as grown by metallorganic vapor phase epitaxy under high temperature growth conditions

We report on the interplay between ferromagnetism and superconductivity in trilayers La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 made of half metallic manganite and high temperature superconductor cuprate. Samples with a fully oxygenated cuprate show a magnetic field interval where the magnetizations of the manganite are aligned antiparallel. A considerable magnetoresistance accompanies the switching between magnetization configurations (parallel vs. antiparallel) of the manganite moments. Suppression of the free carrier density of the cuprate which occurs upon oxygen depletion, results in deep modifications in the shape of the normal state hysteresis loops indicating that there may be a magnetic coupling mediated by free carrier density of the cuprate. This result outlines the importance of quasiparticle transmission in the interplay between ferromagnetism and superconductivity in this kind of samples.

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High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.06.033 ◽

2008 ◽

Vol 310 (17) ◽

pp. 4016-4019 ◽

Cited By ~ 27

Author(s):

Ken-ichi Eriguchi ◽

Takako Hiratsuka ◽

Hisashi Murakami ◽

Yoshinao Kumagai ◽

Akinori Koukitu

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Growth

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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.11.206 ◽

2008 ◽

Vol 310 (7-9) ◽

pp. 2308-2313 ◽

Cited By ~ 55

Author(s):

Masataka Imura ◽

Hiroki Sugimura ◽

Narihito Okada ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Organic Vapor ◽

Metal Organic

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High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.011102 ◽

2009 ◽

Vol 48 (1) ◽

pp. 011102 ◽

Cited By ~ 8

Author(s):

Yasushi Takano ◽

Kenta Morizumi ◽

Satoshi Watanabe ◽

Hiroyuki Masuda ◽

Takuya Okamoto ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Si Substrates

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Cited By ~ 3

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

High Power ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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Active Terahertz near-field probes for high-resolution free-carrier density imaging applications

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves ◽

10.1109/irmmw-thz.2012.6380311 ◽

2012 ◽

Cited By ~ 2

Author(s):

Michael Nagel ◽

Ali Safiei ◽

Tobias Pletzer ◽

Heinrich Kurz

Keyword(s):

High Resolution ◽

Carrier Density ◽

Near Field ◽

Free Carrier ◽

Free Carrier Density

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Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.255 ◽

2010 ◽

Vol 645-648 ◽

pp. 255-258 ◽

Cited By ~ 14

Author(s):

Nicolò Piluso ◽

Andrea Severino ◽

Massimo Camarda ◽

Ruggero Anzalone ◽

Andrea Canino ◽

...

Keyword(s):

Thin Films ◽

Carrier Density ◽

Gas Flow ◽

Strong Relationship ◽

Free Carrier ◽

Silicon Substrates ◽

Accurate Analysis ◽

Si Substrates ◽

Free Carrier Density ◽

Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

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