Vacuum annealing effects on structural and electrical properties of reactively evaporated indium tin oxide

Indium Tin Oxide (ITO) films on polyethylene terephthalate (PET) sandwiching TiO2 buffer layers with different sputtering time have been prepared by rf-magnetron sputtering. Scanning Electron Microscope images of the TiO2 buffer layers showed the non-continuous growth in a typical sputtered film growing process. (400) oriented diffraction peaks appeared in all the ITO/TiO2/PET films. The electrical properties were measured by four point probe method and van der Pauw method. The variations of the resistivity and hall mobility on the sputtering time of TiO2 layer were studied. Furthermore, an exponential decay correlation of resistivity and the grain size was fitted. But the linear relationship between the ITO grain size and the mobility indicated by the grain boundary scattering theory didn’t appear here. The reason is believed to neglect the influence of the local variations of the lattice spacing and some other important scattering mechanisms such as lattice, ionized impurity, neutral impurity scattering, etc.

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Variations in structural and electrical properties of magnetron-sputtered indium tin oxide films with deposition parameters

Thin Solid Films ◽

10.1016/0040-6090(88)90200-3 ◽

1988 ◽

Vol 162 ◽

pp. 119-127 ◽

Cited By ~ 36

Author(s):

Joydeep Dutta ◽

Swati Ray

Keyword(s):

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Oxide Films ◽

Deposition Parameters ◽

Structural And Electrical Properties ◽

Tin Oxide Films

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Structural and electrical properties of rf magnetron‐sputtered Ba1−xSrxTiO3thin films on indium‐tin‐oxide‐coated glass substrate

Journal of Applied Physics ◽

10.1063/1.356537 ◽

1994 ◽

Vol 75 (12) ◽

pp. 7998-8003 ◽

Cited By ~ 48

Author(s):

Tae Song Kim ◽

Chong Hee Kim ◽

Myung Hwan Oh

Keyword(s):

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Glass Substrate ◽

Coated Glass Substrate ◽

Coated Glass ◽

Structural And Electrical Properties

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Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽

10.3390/cryst11050560 ◽

2021 ◽

Vol 11 (5) ◽

pp. 560

Author(s):

Ravindra Ketan Mehta ◽

Anupama Bhat Kaul

Keyword(s):

Electrical Properties ◽

Molybdenum Disulfide ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Cost Effective ◽

Contact Materials ◽

Ito Glass ◽

The Future ◽

Potential Applications ◽

Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

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