The effect of buffer layer on the structural and electrical properties of (BaSr)TiO3thin films deposited on indium tin oxide‐coated glass substrate by using a rf magnetron sputtering method

1994 ◽  
Vol 76 (7) ◽  
pp. 4316-4322 ◽  
Author(s):  
Tae Song Kim ◽  
Chong Hee Kim ◽  
Myung Hwan Oh
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Coated Glass Substrate ◽  
Coated Glass ◽  
Structural And Electrical Properties

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

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