Ion Beam Induced Epitaxial Crystallization of SiC: Fluence -and Temperature Dependence

1996 ◽  
pp. 912-915 ◽  
Author(s):  
R. Kögler ◽  
V. Heera ◽  
W. Skorupa ◽  
M. Voelskow
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Epitaxial Crystallization

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

Study of ion beam induced epitaxial crystallization of SrTiO3

2000 ◽  
Vol 87 (7) ◽  
pp. 3450-3456 ◽  
Author(s):  
K. Oyoshi ◽  
S. Hishita ◽  
H. Haneda
Keyword(s):  
Ion Beam ◽  
Epitaxial Crystallization

Ion beam induced epitaxial crystallization of NiSi2

1990 ◽  
Vol 56 (21) ◽  
pp. 2117-2119 ◽  
Author(s):  
M. C. Ridgway ◽  
R. G. Elliman ◽  
J. S. Williams
Keyword(s):  
Ion Beam ◽  
Epitaxial Crystallization

Temperature Dependence of Electron Beam Induced Epitaxial Crystallization of Silicon

1990 ◽  
Vol 122 (1) ◽  
pp. K35-K37 ◽  
Author(s):  
D. Hoehl ◽  
V. Heera ◽  
H. Bartsch ◽  
K. Wollschläger ◽  
W. Skorupa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Temperature Dependence ◽  
Epitaxial Crystallization

TRANSPORT CHARACTERISTICS IN c-AXIS La2-xSrxCuO4 (LSCO) SINGLE CRYSTALS

2005 ◽  
Vol 19 (01n03) ◽  
pp. 447-450
Author(s):  
SANG-JAE KIM ◽  
TAKESHI HATANO
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Critical Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Method ◽  
First Time ◽  
Small Voltage

c-axis micro-bridges of La 2-x Sr x CuO 4 ( LSCO ) single crystals were fabricated by the focused-ion-beam (FIB) etching method. Small rectangular LSCO pieces were fabricated by cutting and grinding single crystals of underdoped LSCO of x=0.09. The size of LSCO single crystals between electrodes was cut to 20×40μm2 in ab-plane by using the FIB etching method. Superconductor-insulator-superconductor (SIS) like-branch structures on I-V curves of the LSCO stacks were observed for the first time. The branch structures exhibited voltage jumps of several tens mV in the range of from 1.7 K to 5 K with temperature dependence. When the temperature is changed from 5 K to 1.7 K , the critical current and the next branch split into a few of small voltage jumps with the intervals of several mV in the range of from 0.1 mV and 2.0 mV .

Thermoelectric Transport Properties of Individual Bismuth Nanowires

2001 ◽  
Vol 691 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Point Contacts ◽  
Large Spread ◽  
Thermoelectric Transport Properties ◽  
Bismuth Nanowires ◽  
Increasing Temperature ◽  
Magneto Resistance

ABSTRACTWe developed a method for making 4-point contacts to Bi nanowires with a thick oxide coat using a combination of lithographic and focused ion beam (FIB) techniques. The resistivity of Bi nanowires with diameters in the range 70-200nm is found to increase with decreasing wire diameter. In contrast to bulk Bi, the temperature dependence of the resistivity is found to decrease monotonically with increasing temperature. The results are explained on the basis of increased scattering in the nanowire and the known temperature dependence of the electronic properties of bulk Bi. A large magneto-resistance was also measured, indicating a high crystalline quality of the nanowires. A large spread in the measured values of the resistivity indicates significant systematic error in the measurement technique. Possible sources for error are discussed.

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