High resolution transmission electron microscopy of the planar defect structure of hexagonal boron nitride

1995 ◽  
Vol 150 (1) ◽  
pp. 227-237 ◽  
Author(s):  
S. Turan ◽  
K. M. Knowles
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Defect Structure ◽  
Hexagonal Boron Nitride ◽  
Planar Defect ◽  
Transmission Electron

scholarly journals Ultra-High-Resolution Transmission Electron Microscopy of Atomically Thin Hexagonal Boron Nitride (h-BN)

2010 ◽  
Vol 16 (S2) ◽  
pp. 120-121 ◽  
Author(s):  
N Alem ◽  
R Erni ◽  
C Kisielowski ◽  
MD Rossell ◽  
W Gannett ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
Nasim Alem ◽  
Rolf Erni ◽  
Christian Kisielowski ◽  
Marta D. Rossell ◽  
Will Gannett ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Ultrahigh Resolution ◽  
Transmission Electron

Grain Boundary Dislocation Structure and Motion in an Aluminum Σ=3 [011] Bicrystal

1996 ◽  
Vol 466 ◽  
Author(s):  
D. L. Medlin ◽  
S. M. Foiles ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Defect Structure ◽  
Boundary Dislocation ◽  
Structure And Motion ◽  
Transmission Electron ◽  
Atomistic Calculations

ABSTRACTHigh-resolution transmission electron microscopy (HRTEM) observations are presented of a/3[111] grain-boundary dislocations in an aluminum Σ=3[011] bicrystal. These dislocations are present on both (111) (coherent twin) and (211) (incoherent twin) facets of the bicrystal boundary. The dislocations on the coherent twin facet migrate by a climb process that increases the thickness of the twinned material. These dislocations originate on a Σ=3 (211) incoherent twin boundary where they are closely spaced and dissociated in a wide core configuration. Atomistic calculations of the defect structure and interaction of multiple a/3[111] grain boundary dislocations are discussed.

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