Grain Boundary Dislocation Structure and Motion in an Aluminum Σ=3 [011] Bicrystal

1996 ◽  
Vol 466 ◽  
Author(s):  
D. L. Medlin ◽  
S. M. Foiles ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Defect Structure ◽  
Boundary Dislocation ◽  
Structure And Motion ◽  
Transmission Electron ◽  
Atomistic Calculations

ABSTRACTHigh-resolution transmission electron microscopy (HRTEM) observations are presented of a/3[111] grain-boundary dislocations in an aluminum Σ=3[011] bicrystal. These dislocations are present on both (111) (coherent twin) and (211) (incoherent twin) facets of the bicrystal boundary. The dislocations on the coherent twin facet migrate by a climb process that increases the thickness of the twinned material. These dislocations originate on a Σ=3 (211) incoherent twin boundary where they are closely spaced and dissociated in a wide core configuration. Atomistic calculations of the defect structure and interaction of multiple a/3[111] grain boundary dislocations are discussed.

High-Resolution Transmission Electron Microscopy Studies of a Near Sigma11 Grain Boundary in alpha-Alumina

1994 ◽  
Vol 77 (2) ◽  
pp. 339-348 ◽  
Author(s):  
Thomas Hoche ◽  
Philip R. Kenway ◽  
Hans-Joachim Kleebe ◽  
Manfred Ruhle ◽  
Patricia A. Morris
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Transmission Electron ◽  
Alpha Alumina

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

2004 ◽  
Vol 810 ◽  
Author(s):  
H.B. Yao ◽  
D.Z. Chi ◽  
S. Tripathy ◽  
S.Y. Chow ◽  
W.D. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Surface Morphology ◽  
Morphological Stability ◽  
Triple Junctions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Segregation Process

ABSTRACTThe germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

Grain Boundary Transformations in Bi-Doped Copper

1991 ◽  
Vol 238 ◽  
Author(s):  
Elsie C. Urdaneta ◽  
David E. Luzzi ◽  
Charles J. McMahon
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Treatment Time ◽  
High Resolution Electron Microscopy ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTBismuth-induced grain boundary faceting in Cu-12 at ppm Bi polycrystals was studied using transmission electron microscopy (TEM). The population of faceted grain boundaries in samples aged at 600°C was observed to increase with heat treatment time from 15min to 24h; aging for 72h resulted in de-faceting, presumably due to loss of Bi from the specimen. The majority of completely faceted boundaries were found between grains with misorientation Σ=3. About 65% of the facets of these boundaries were found to lie parallel to crystal plane pairs of the type {111}1/{111]2- The significance of these findings in light of recent high resolution electron microscopy experiments is discussed.

On the Twin Boundary Propagation in (111) 3C-SiC Layers

2012 ◽  
Vol 717-720 ◽  
pp. 419-422 ◽  
Author(s):  
Maya Marinova ◽  
Ariadne Andreadou ◽  
Alkyoni Mantzari ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Twin Boundary ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Vapor Liquid Solid ◽  
Stages Of Growth ◽  
Transmission Electron

The present study reports on the propagation of twin boundaries in (111) 3C-SiC by means of conventional (CTEM) and high resolution transmission electron microscopy (HRTEM). The investigated 3C-SiC layers were homoepitaxially grown by Chemical Vapour Deposition (CVD) on layers previously grown by Vapor Liquid Solid (VLS) mechanism on 6H-SiC substrates. At the initial stages of growth the usual twin boundary that occurs is an incoherent {-211} Σ3 one. It transforms to more energetically favorable cases by several ways: (i) The initial {-211} boundary turns 90º, to a fully coherent (111) interface, forming microtwins; (ii) A step-like interface occurs with facets along the (111) and the {-211} planes; (iii) It transforms in a fourfold twin complex propagating to the surface.

Diffusion, Migration and the Atomic Structure of some Grain Boundaries

1985 ◽  
Vol 57 ◽  
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Atomic Structure ◽  
Boundary Diffusion ◽  
Transmission Electron ◽  
Diffusion Migration ◽  
Tilt Boundaries ◽  
And Migration

AbstractThe atomic structure of representative tilt boundaries in gold has been determined by high resolution transmission electron microscopy. Characteristic and varying regions of decreased density and coordination have been identified and related to mechanisms of grain boundary diffusion and migration

Characterization of the Structure and Polarity of Twin Boundaries in GaP

1998 ◽  
Vol 510 ◽  
Author(s):  
Dov Cohent ◽  
D.L. Medlin ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Twin Boundary ◽  
Atomic Structure ◽  
Twin Boundaries ◽  
Planar Defects ◽  
Transmission Electron ◽  
Crystallographic Planes

AbstractThe structure of planar defects in GaP films grown by MBE on Si (110) was investigated by transmission electron microscopy. Growth of GaP films on the (110) surface produced numerous microtwins which formed both first and second order twin boundaries. Using high-resolution transmission electron microscopy, the atomic structure of Σ=3 and Σ=9 twin boundaries were studied. Both the Σ=3 and Σ=9 interfaces were observed to facet along specific crystallographic planes. Geometric models of the Σ=9 {221} twin boundary accounting for different polar bonding configurations were proposed and compared with experimental observations.

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