Effects of applied magnetic fields on direct and indirect excitons in coupled semiconductor quantum wells

2005 ◽  
Vol 242 (9) ◽  
pp. 1829-1832 ◽  
Author(s):  
E. Reyes-Gómez ◽  
L. E. Oliveira ◽  
M. de Dios-Leyva
2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Y. D. Jho ◽  
X. Wang ◽  
D. H. Reitze ◽  
J. Kono ◽  
A. A. Belyanin ◽  
...  

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1574-1578
Author(s):  
KAZUHITO UCHIDA ◽  
NOBORU MIURA ◽  
YASUHIRO SHIRAKI

Magnetophotoluminescence from spatially separated excitons in type-II semiconductor heterostructures, GaP/AlP neighboring confinement structures (NCSs) have been investigated. The sample studied consists of adjacent GaP and AlP quantum wells sandwiched between AlGaP barriers. The excitation power dependence and the well thickness dependence of the exciton PL are studied in magnetic fields applied perpendicular to the heterointerfaces. Compared to the thinner NCS, the magneto-PL of the wider NCS is strongly modified by the excitation power; the magnetic field dependence of the PL peak energy clearly changes from the anomalous red-shifts into the diamagnetic shifts with increasing excitation laser power.


1999 ◽  
Vol 60 (4) ◽  
pp. 2599-2609 ◽  
Author(s):  
Wei Min Zhang ◽  
Torsten Meier ◽  
Vladimir Chernyak ◽  
Shaul Mukamel

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