DYNAMICS OF SPATIALLY INDIRECT EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES IN MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1574-1578
Author(s):  
KAZUHITO UCHIDA ◽  
NOBORU MIURA ◽  
YASUHIRO SHIRAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Excitation Power ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
Power Dependence ◽  
Indirect Excitons ◽  
Peak Energy ◽  
Excitation Laser ◽  
The Magnetic Field

Magnetophotoluminescence from spatially separated excitons in type-II semiconductor heterostructures, GaP/AlP neighboring confinement structures (NCSs) have been investigated. The sample studied consists of adjacent GaP and AlP quantum wells sandwiched between AlGaP barriers. The excitation power dependence and the well thickness dependence of the exciton PL are studied in magnetic fields applied perpendicular to the heterointerfaces. Compared to the thinner NCS, the magneto-PL of the wider NCS is strongly modified by the excitation power; the magnetic field dependence of the PL peak energy clearly changes from the anomalous red-shifts into the diamagnetic shifts with increasing excitation laser power.

Spatially indirect photoluminescence of ZnSe/BeTe type II quantum wells in pulsed high magnetic fields

2009 ◽  
Vol 6 (1) ◽  
pp. 38-41 ◽  
Author(s):  
Shojiro Takeyama ◽  
Rui Shen ◽  
Yohei Enya ◽  
Eiji Kojima ◽  
Hirofumi Mino ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
High Magnetic Fields ◽  
Type Ii ◽  
Type Ii Quantum Wells

scholarly journals Superfluorescence from photoexcited semiconductor quantum wells: Magnetic field, temperature, and excitation power dependence

2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Kankan Cong ◽  
Yongrui Wang ◽  
Ji-Hee Kim ◽  
G. Timothy Noe ◽  
Stephen A. McGill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Excitation Power ◽  
Power Dependence ◽  
Semiconductor Quantum Wells ◽  
Field Temperature

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Excitation Power ◽  
Ultraviolet Region ◽  
Nonradiative Recombination ◽  
Power Dependence ◽  
Recombination Mechanism ◽  
Quantum Well Structures ◽  
Internal Efficiency

ABSTRACTTo date, light emission by AlGaN-based heterostructures and LED's operating in the ultraviolet region is far less efficient than emission from longer wavelength structures based on GaInN. We have realized GaN/AlGaN quantum well structures emitting in the 360–320 nm range with peak room-temperature internal efficiencies reaching more than 20 %. From detailed studies of the temperature and excitation power dependence of the efficiency we find that excitons play a crucial role enhancing radiative recombination in such structures. Except for the peak internal efficiency, which reaches 73 % in GaInN/GaN, the overall behavior in GaN/AlGaN and GaInN/GaN is very similar, suggesting that the main difference is the nonradiative recombination mechanism.

Large excitation-power dependence of pressure coefficients of InxGa1xN/InyGa1yN quantum wells

2003 ◽  
Vol 235 (2) ◽  
pp. 427-431 ◽  
Author(s):  
Q. Li ◽  
Z.L. Fang ◽  
S.J. Xu ◽  
G.H. Li ◽  
M.H. Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Power Dependence ◽  
Pressure Coefficients
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