A theoretical study of an amorphous aluminium oxide layer used as a tunnel barrier in a magnetic tunnel junction

2007 ◽  
Vol 244 (12) ◽  
pp. 4427-4430 ◽  
Author(s):  
E. S. Noh ◽  
S. E. Ulloa ◽  
H. M. Lee
Keyword(s):  
Oxide Layer ◽  
Tunnel Junction ◽  
Theoretical Study ◽  
Aluminium Oxide ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Aluminium Oxide Layer

scholarly journals The Influence of Input Factors of Aluminium Anodizing Process on Resulting Thickness and Quality of Aluminium Oxide Layer

2016 ◽  
Vol 149 ◽  
pp. 512-519 ◽  
Author(s):  
Alena Vagaská ◽  
Erika Fechová ◽  
Peter Michal ◽  
Miroslav Gombár
Keyword(s):  
Oxide Layer ◽  
Aluminium Oxide ◽  
Aluminium Oxide Layer

Improved thermal stability of Mn-Ir-based magnetic tunnel junction with nano-oxide layer

2004 ◽  
Vol 201 (8) ◽  
pp. 1716-1719
Author(s):  
S. Y. Yoon ◽  
Y. I. Kim ◽  
D. H. Lee ◽  
Y. S. Kim ◽  
S. J. Suh
Keyword(s):  
Thermal Stability ◽  
Oxide Layer ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nano Oxide ◽  
Thermal Stability Of

scholarly journals Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pawan Tyagi ◽  
Hayden Brown ◽  
Andrew Grizzle ◽  
Christopher D’Angelo ◽  
Bishnu R. Dahal
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Molecular Device ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Covalently Bonded ◽  
Wide Range ◽  
Device Properties ◽  
Theoretical Simulations

AbstractNearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

scholarly journals Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

2014 ◽  
Vol 140 (23) ◽  
pp. 234708 ◽  
Author(s):  
Andrew J. Gibson ◽  
Robert H. Temperton ◽  
Karsten Handrup ◽  
Matthew Weston ◽  
Louise C. Mayor ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxide Layer ◽  
Aluminium Oxide ◽  
Metallic Substrate ◽  
Aluminium Oxide Layer

scholarly journals Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Peter Michal ◽  
Alena Vagaská ◽  
Miroslav Gombár ◽  
Ján Kmec ◽  
Emil Spišák ◽  
...  
Keyword(s):  
Oxalic Acid ◽  
Oxide Layer ◽  
Sulphuric Acid ◽  
Aluminium Oxide ◽  
Acid Amount ◽  
Marquardt Algorithm ◽  
Current Densities ◽  
Neural Unit ◽  
The Impact ◽  
Aluminium Oxide Layer

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2and 3 A·dm−2for creating aluminium oxide layer.

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