Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method

2015 ◽  
Vol 253 (1) ◽  
pp. 158-163 ◽  
Author(s):  
Akshay Shedbalkar ◽  
Zhelio Andreev ◽  
Bernd Witzigmann
Keyword(s):  
Gallium Nitride ◽  
Quantum Well ◽  
Green's Function ◽  
Function Method ◽  
Indium Gallium Nitride ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Indium Gallium ◽  
Non Equilibrium Green’S Function ◽  
Non Equilibrium

A dual-wavelength indium gallium nitride quantum well light emitting diode

2001 ◽  
Vol 79 (16) ◽  
pp. 2532-2534 ◽  
Author(s):  
I. Ozden ◽  
E. Makarona ◽  
A. V. Nurmikko ◽  
T. Takeuchi ◽  
M. Krames
Keyword(s):  
Gallium Nitride ◽  
Quantum Well ◽  
Indium Gallium Nitride ◽  
Light Emitting Diode ◽  
Dual Wavelength ◽  
Light Emitting ◽  
Indium Gallium

scholarly journals Giant magnetoresistance and spin Seebeck coefficient in zigzag α-graphyne nanoribbons

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11121-11129 ◽  
Author(s):  
Ming-Xing Zhai ◽  
Xue-Feng Wang ◽  
P. Vasilopoulos ◽  
Yu-Shen Liu ◽  
Yao-Jun Dong ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Green's Function ◽  
Density Functional ◽  
Function Method ◽  
Giant Magnetoresistance ◽  
Functional Theory ◽  
Non Equilibrium Green’S Function ◽  
Non Equilibrium

We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag α-graphyne nanoribbons (ZαGNRs) using density-functional theory combined with non-equilibrium Green's function method.

scholarly journals Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 418 ◽  
Author(s):  
Yi-Yun Chen ◽  
Yuan-Chang Jhang ◽  
Chia-Jung Wu ◽  
Hsiang Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Oxidation Process ◽  
Light Emitting Diode ◽  
Wet Etching ◽  
Light Emitting ◽  
Light Emitter ◽  
Current Confinement ◽  
Indium Gallium ◽  
Resonance Cavity ◽  
A Current

An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications.

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