Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

2015 ◽  
Vol 31 ◽  
pp. 153-159 ◽  
Author(s):  
Jaecheon Han ◽  
Daehee Lee ◽  
Boram Jin ◽  
Hwanhee Jeong ◽  
June-O Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
High Performance ◽  
Indium Gallium Nitride ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Type Contact ◽  
Chip Size ◽  
Indium Gallium

A dual-wavelength indium gallium nitride quantum well light emitting diode

2001 ◽  
Vol 79 (16) ◽  
pp. 2532-2534 ◽  
Author(s):  
I. Ozden ◽  
E. Makarona ◽  
A. V. Nurmikko ◽  
T. Takeuchi ◽  
M. Krames
Keyword(s):  
Gallium Nitride ◽  
Quantum Well ◽  
Indium Gallium Nitride ◽  
Light Emitting Diode ◽  
Dual Wavelength ◽  
Light Emitting ◽  
Indium Gallium

scholarly journals Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 418 ◽  
Author(s):  
Yi-Yun Chen ◽  
Yuan-Chang Jhang ◽  
Chia-Jung Wu ◽  
Hsiang Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Oxidation Process ◽  
Light Emitting Diode ◽  
Wet Etching ◽  
Light Emitting ◽  
Light Emitter ◽  
Current Confinement ◽  
Indium Gallium ◽  
Resonance Cavity ◽  
A Current

An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications.

scholarly journals Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes

1999 ◽  
Vol 24 (20) ◽  
pp. 1407 ◽  
Author(s):  
Fu-Jen Kao ◽  
Mao-Kuo Huang ◽  
Yung-Shun Wang ◽  
Sheng-Lung Huang ◽  
Ming-Kwei Lee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Blue Light ◽  
Indium Gallium Nitride ◽  
Light Emitting Diodes ◽  
Optical Beam ◽  
Induced Current ◽  
Light Emitting ◽  
Two Photon ◽  
Indium Gallium ◽  
Optical Beam Induced Current
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