scholarly journals Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

2021 ◽  
pp. 2100031
Author(s):  
Elham Khorasani ◽  
Thomas Frauenheim ◽  
Bálint Aradi ◽  
Peter Deák
2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.


Polymers ◽  
2018 ◽  
Vol 10 (2) ◽  
pp. 206 ◽  
Author(s):  
Elisseos Verveniotis ◽  
Yuji Okawa ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Takaaki Taniguchi ◽  
...  

2021 ◽  
Vol 125 (6) ◽  
pp. 1325-1335 ◽  
Author(s):  
Cesar Jara ◽  
Tomáš Rauch ◽  
Silvana Botti ◽  
Miguel A. L. Marques ◽  
Ariel Norambuena ◽  
...  

ACS Photonics ◽  
2021 ◽  
Author(s):  
Prince Khatri ◽  
Ralph Nicholas Edward Malein ◽  
Andrew J. Ramsay ◽  
Isaac J. Luxmoore

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.


ACS Photonics ◽  
2021 ◽  
Author(s):  
Ghazal Hajisalem ◽  
Mirali Seyed Shariatdoust ◽  
Rana Faryad Ali ◽  
Byron D. Gates ◽  
Paul E. Barclay ◽  
...  

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